Charge propagation dynamics at trapping centers that induce the luminescence of rare-earth dopants in wide-gap materials

Masashi Ishii, Susumu Harako, Xinwei Zhao, Shuji Komuro, Bruce Hamilton

    Research output: Contribution to journalArticlepeer-review

    Abstract

    For rare-earth doped semiconductors, charge propagation from semiconductors to rare-earths is essential for excitation of optically active dopants. However, the qualitative model that has been widely accepted to describe this process is based upon indirect evidence; in this model, it is believed that trapping and subsequent recombination of the charges at some rare-earth-related defect excite the dopants. In this work, we observe the sequential process directly, and quantify the trapped charge density and relaxation frequency using a photoelectric measurement technique for samarium-doped titanium dioxide with intense visible luminescence under ultraviolet light. © 2011 American Institute of Physics.
    Original languageEnglish
    Article number101909
    JournalApplied Physics Letters
    Volume99
    Issue number10
    DOIs
    Publication statusPublished - 5 Sep 2011

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