Chemical vapor deposition of tin sulfide from diorganotin(IV) dixanthates

Mundher Al-shakban, Peter D. Matthews, Edward A. Lewis, James Raftery, Inigo Vitorica-yrezabal, Sarah J. Haigh, David J. Lewis, Paul O’brien

Research output: Contribution to journalArticlepeer-review


We report the synthesis and single-crystal X-ray characterization of diphenyltin bis(2-methoxyethylxanthate) and diphenyltin bis(iso-butylxanthate). These xanthates have been used as a single-source precursor to deposit tin chalcogenide thin films by aerosol-assisted chemical vapor deposition. Grazing incidence X-ray diffraction and scanning transmission electron microscope imaging coupled with elemental mapping show that films deposited from diphenyltin bis(iso-butylxanthate) contain orthorhombic SnS, while films deposited from diphenyltin bis(2-methoxyethylxanthate) between 400 and 575 °C form a SnS/SnO2 nanocomposite. In synthesizing the thin films, we have also demonstrated an ability to control the band gap of the materials based on composition and deposition temperature.
Original languageEnglish
Pages (from-to)23315-2323
JournalJournal of Materials Science
Issue number3
Early online date28 Sept 2018
Publication statusPublished - Feb 2019


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