Chemical vapor deposition of tin sulfide from diorganotin(IV) dixanthates

Mundher Al-shakban; Peter D. Matthews; Edward A. Lewis; James Raftery; Inigo Vitorica-yrezabal; Sarah J. Haigh; David J. Lewis; Paul O’brien

doi:10.1007/s10853-018-2968-y

Chemical vapor deposition of tin sulfide from diorganotin(IV) dixanthates

Mundher Al-shakban, Peter D. Matthews, Edward A. Lewis, James Raftery, Inigo Vitorica-yrezabal, Sarah J. Haigh, David J. Lewis, Paul O’brien

Materials Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We report the synthesis and single-crystal X-ray characterization of diphenyltin bis(2-methoxyethylxanthate) and diphenyltin bis(iso-butylxanthate). These xanthates have been used as a single-source precursor to deposit tin chalcogenide thin films by aerosol-assisted chemical vapor deposition. Grazing incidence X-ray diffraction and scanning transmission electron microscope imaging coupled with elemental mapping show that films deposited from diphenyltin bis(iso-butylxanthate) contain orthorhombic SnS, while films deposited from diphenyltin bis(2-methoxyethylxanthate) between 400 and 575 °C form a SnS/SnO2 nanocomposite. In synthesizing the thin films, we have also demonstrated an ability to control the band gap of the materials based on composition and deposition temperature.

Original language	English
Pages (from-to)	23315-2323
Journal	Journal of Materials Science
Volume	54
Issue number	3
Early online date	28 Sept 2018
DOIs	https://doi.org/10.1007/s10853-018-2968-y
Publication status	Published - Feb 2019

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title = "Chemical vapor deposition of tin sulfide from diorganotin(IV) dixanthates",

abstract = "We report the synthesis and single-crystal X-ray characterization of diphenyltin bis(2-methoxyethylxanthate) and diphenyltin bis(iso-butylxanthate). These xanthates have been used as a single-source precursor to deposit tin chalcogenide thin films by aerosol-assisted chemical vapor deposition. Grazing incidence X-ray diffraction and scanning transmission electron microscope imaging coupled with elemental mapping show that films deposited from diphenyltin bis(iso-butylxanthate) contain orthorhombic SnS, while films deposited from diphenyltin bis(2-methoxyethylxanthate) between 400 and 575 °C form a SnS/SnO2 nanocomposite. In synthesizing the thin films, we have also demonstrated an ability to control the band gap of the materials based on composition and deposition temperature.",

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T1 - Chemical vapor deposition of tin sulfide from diorganotin(IV) dixanthates

AU - Al-shakban, Mundher

AU - Matthews, Peter D.

AU - Lewis, Edward A.

AU - Raftery, James

AU - Vitorica-yrezabal, Inigo

AU - Haigh, Sarah J.

AU - Lewis, David J.

AU - O’brien, Paul

PY - 2019/2

Y1 - 2019/2

N2 - We report the synthesis and single-crystal X-ray characterization of diphenyltin bis(2-methoxyethylxanthate) and diphenyltin bis(iso-butylxanthate). These xanthates have been used as a single-source precursor to deposit tin chalcogenide thin films by aerosol-assisted chemical vapor deposition. Grazing incidence X-ray diffraction and scanning transmission electron microscope imaging coupled with elemental mapping show that films deposited from diphenyltin bis(iso-butylxanthate) contain orthorhombic SnS, while films deposited from diphenyltin bis(2-methoxyethylxanthate) between 400 and 575 °C form a SnS/SnO2 nanocomposite. In synthesizing the thin films, we have also demonstrated an ability to control the band gap of the materials based on composition and deposition temperature.

AB - We report the synthesis and single-crystal X-ray characterization of diphenyltin bis(2-methoxyethylxanthate) and diphenyltin bis(iso-butylxanthate). These xanthates have been used as a single-source precursor to deposit tin chalcogenide thin films by aerosol-assisted chemical vapor deposition. Grazing incidence X-ray diffraction and scanning transmission electron microscope imaging coupled with elemental mapping show that films deposited from diphenyltin bis(iso-butylxanthate) contain orthorhombic SnS, while films deposited from diphenyltin bis(2-methoxyethylxanthate) between 400 and 575 °C form a SnS/SnO2 nanocomposite. In synthesizing the thin films, we have also demonstrated an ability to control the band gap of the materials based on composition and deposition temperature.

U2 - 10.1007/s10853-018-2968-y

DO - 10.1007/s10853-018-2968-y

M3 - Article

SN - 0022-2461

VL - 54

SP - 23315

EP - 22323

JO - Journal of Materials Science

JF - Journal of Materials Science

IS - 3

ER -

Chemical vapor deposition of tin sulfide from diorganotin(IV) dixanthates

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