Chirality-specific transport phenomena of isolated single-walled carbon nanotube

Single-walled carbon nanotube-field effect transistors (SWCNT-FETs) have been fabricated using in-situ thermal chemical vapor deposition. For isolated devices, the resonant Raman spectra confirmed that the full width at half maximum (FWHM) of the radial breathing mode (RBM) peaks was about 4 cm–1, consistent with atomic force microscopy (AFM) images that clearly revealed the individually isolated SWCNTs on the patterned substrate with a diameter of 1.3 nm. Subsequent I –V measurements of the SWCNT-FET revealed a clear gating effect for samples with semiconducting SWCNTs. The transport phenomena of a device with mixed metallic and semiconducting SWCNTs network were governed by the metallic nanotube with severely suppressed gate modulation. Identification of the chirality of SWCNTs by resonant Raman spectroscopy prior to the I –V characteristics guarantees the validity of working FET devices