Abstract
ChiralMEM is a new concept for high-density magnetic random access memory for information technology [1-3]. It is an array memory capable of storing multiple bits of information per array cell in contrast to conventional existing single-bit-per-cell technologies. ChiralMEM is based upon the creation of multiple magnetic states by chirality dependant selective pinning of magnetic domain walls. Importantly, ChiralMEM is compatible with existing fabrication technology.
Original language | English |
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Title of host publication | Nanotechnology 2009: - Technical Proceedings of the 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009, May 3-7 2009, Houston, Texas. |
Editors | Nano Science and Technology Institute. |
Publisher | CRC Press |
Pages | 632-635 |
Number of pages | 3 |
Volume | 1: Fabrication, particles, characterization, MEMS, electronics and photonics |
ISBN (Print) | 9781439817858 |
Publication status | Published - 2009 |
Keywords
- Domain walls
- MRAM
- Multi-bit cell
- Nahowire
- Spintronics