ChiralMEM: A novel concept for high density magnetic memory technology

J. A. King, D. S. Eastwood, L. K. Bogart, H. Armstrong, M. Bath, P. Atkinson

    Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

    Abstract

    ChiralMEM is a new concept for high-density magnetic random access memory for information technology [1-3]. It is an array memory capable of storing multiple bits of information per array cell in contrast to conventional existing single-bit-per-cell technologies. ChiralMEM is based upon the creation of multiple magnetic states by chirality dependant selective pinning of magnetic domain walls. Importantly, ChiralMEM is compatible with existing fabrication technology.
    Original languageEnglish
    Title of host publicationNanotechnology 2009: - Technical Proceedings of the 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009, May 3-7 2009, Houston, Texas.
    EditorsNano Science and Technology Institute.
    PublisherCRC Press
    Pages632-635
    Number of pages3
    Volume1: Fabrication, particles, characterization, MEMS, electronics and photonics
    ISBN (Print)9781439817858
    Publication statusPublished - 2009

    Keywords

    • Domain walls
    • MRAM
    • Multi-bit cell
    • Nahowire
    • Spintronics

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