CMOS integration of epitaxial Gd 2 O 3 high- k gate dielectrics

HDB Gottlob; T Echtermeyer; T Mollenhauer; JK Efavi; M Schmidt; T Wahlbrink; Max C Lemme; H Kurz; M Czernohorsky; E Bugiel

CMOS integration of epitaxial Gd 2 O 3 high- k gate dielectrics

HDB Gottlob, T Echtermeyer, T Mollenhauer, JK Efavi, M Schmidt, T Wahlbrink, Max C Lemme, H Kurz, M Czernohorsky, E Bugiel

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	979-985
Number of pages	7
Journal	Solid-state electronics
Volume	50
Issue number	6
Publication status	Published - 2006

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@article{7db95df9e8ea4419a5ba7f7305420e7e,

title = "CMOS integration of epitaxial Gd 2 O 3 high- k gate dielectrics",

author = "HDB Gottlob and T Echtermeyer and T Mollenhauer and JK Efavi and M Schmidt and T Wahlbrink and Lemme, {Max C} and H Kurz and M Czernohorsky and E Bugiel",

year = "2006",

language = "English",

volume = "50",

pages = "979--985",

journal = "Solid-state electronics",

publisher = "Elsevier BV",

number = "6",

}

TY - JOUR

T1 - CMOS integration of epitaxial Gd 2 O 3 high- k gate dielectrics

AU - Gottlob, HDB

AU - Echtermeyer, T

AU - Mollenhauer, T

AU - Efavi, JK

AU - Schmidt, M

AU - Wahlbrink, T

AU - Lemme, Max C

AU - Kurz, H

AU - Czernohorsky, M

AU - Bugiel, E

PY - 2006

Y1 - 2006

M3 - Article

VL - 50

SP - 979

EP - 985

JO - Solid-state electronics

JF - Solid-state electronics

IS - 6

ER -

CMOS integration of epitaxial Gd<sub> 2 O<sub> 3 high-<i> k gate dielectrics

Cite this