Coexistence of electron and hole transport in graphene

S. Wiedmann, H. J. Van Elferen, E. V. Kurganova, M. I. Katsnelson, A. J M Giesbers, A. Veligura, B. J. Van Wees, R. V. Gorbachev, K. S. Novoselov, J. C. Maan, U. Zeitler

    Research output: Contribution to journalArticlepeer-review


    When sweeping the carrier concentration in monolayer graphene through the charge neutrality point, the experimentally measured Hall resistivity shows a smooth zero crossing. Using a two-component model of coexisting electrons and holes around the charge neutrality point, we unambiguously show that both types of carriers are simultaneously present. For high magnetic fields up to 30 T the electron and hole concentrations at the charge neutrality point increase with the degeneracy of the zero-energy Landau level, which implies a quantum Hall metal state at ν=0 made up by both electrons and holes. © 2011 American Physical Society.
    Original languageEnglish
    Article number115314
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Issue number11
    Publication statusPublished - 21 Sept 2011


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