Combined Pulsed RF GD-OES and HAXPES for Quantified Depth Profiling through Coatings

Muriel Bouttemy, Solène Béchu, Ben Spencer, Pia Dally, Patrick Chapon, Arnaud Etcheberry

Research output: Contribution to journalArticlepeer-review


Chemical characterization at buried interfaces is a real challenge, as the physico-chemical processes operating at the interface govern the properties of many systems and devices. We have developed a methodology based on the combined use of pulsed RF GD-OES (pulsed Radio Frequency Glow Discharge Optical Emission Spectrometry) and XPS (X-ray Photoelectron Spectroscopy) to facilitate the access to deeply buried locations (taking advantage of the high profiling rate of the GD-OES) and perform an accurate chemical diagnosis using XPS directly inside the GD crater. The reliability of the chemical information is, however, influenced by a perturbed layer present at the surface of the crater, hindering traditional XPS examination due to a relatively short sampling depth. Sampling below the perturbed layer may, however, can be achieved using a higher energy excitation source with an increased sampling depth, and is enabled here by a new laboratory-based HAXPES (Hard X-ray PhotoElectron Spectroscopy) (Ga-Kα, 9.25 keV). This new approach combining HAXPES with pulsed RF GD-OES requires benchmarking and is here demonstrated and evaluated on InP. The perturbed depth is estimated and the consistency of the chemical information measured is demonstrated, offering a new route for advanced chemical depth profiling through coatings and heterostructures.
Original languageEnglish
Article number702
Number of pages11
Issue number6
Publication statusPublished - 11 Jun 2021


  • Crater chemistry
  • Depth profiling
  • InP
  • Metrology
  • Plasma-induced perturbation
  • Pulsed RF GD-OES
  • Quantitative analyses
  • XPS

Research Beacons, Institutes and Platforms

  • Henry Royce Institute


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