Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells

M. J. Davies; Philip Dawson; Simon Hammersley; T. Zhu; M. J. Kappers; C. J. Humphreys; null R. A. Oliver

doi:10.1063/1.4954236

Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells

M. J. Davies, Philip Dawson, Simon Hammersley, T. Zhu, M. J. Kappers, C. J. Humphreys, R. A. Oliver

University of Cambridge

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Abstract

We report on a comparative study of efficiency droop in polar and non-polar InGaN quantum well structures at T = 10K. To ensure that the experiments were carried out with identical carrier densities for any particular excitation power density, we used laser pulses of duration ~100fs at a repetition rate of 400 kHz. For both types of structure efficiency droop was observed to occur for carrier densities of above 7×1011 cm-2pulse-1 per quantum well; also both structures exhibited similar spectral broadening in the droop regime. These results show that efficiency droop is intrinsic in InGaN quantum wells, whether polar or non-polar, and is a function, specifically, of carrier density.

Original language	English
Article number	252101
Journal	Applied Physics Letters
Volume	106
Early online date	20 Jun 2016
DOIs	https://doi.org/10.1063/1.4954236
Publication status	Published - 2016

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10.1063/1.4954236Licence: CC BY

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title = "Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells",

abstract = "We report on a comparative study of efficiency droop in polar and non-polar InGaN quantum well structures at T = 10K. To ensure that the experiments were carried out with identical carrier densities for any particular excitation power density, we used laser pulses of duration ~100fs at a repetition rate of 400 kHz. For both types of structure efficiency droop was observed to occur for carrier densities of above 7×1011 cm-2pulse-1 per quantum well; also both structures exhibited similar spectral broadening in the droop regime. These results show that efficiency droop is intrinsic in InGaN quantum wells, whether polar or non-polar, and is a function, specifically, of carrier density. ",

author = "Davies, {M. J.} and Philip Dawson and Simon Hammersley and {T. Zhu} and {M. J. Kappers} and {C. J. Humphreys} and {R. A. Oliver}",

year = "2016",

doi = "10.1063/1.4954236",

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journal = "Applied Physics Letters",

issn = "0003-6951",

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T1 - Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells

AU - Davies, M. J.

AU - Dawson, Philip

AU - Hammersley, Simon

AU - T. Zhu,

AU - M. J. Kappers,

AU - C. J. Humphreys,

AU - R. A. Oliver, null

PY - 2016

Y1 - 2016

N2 - We report on a comparative study of efficiency droop in polar and non-polar InGaN quantum well structures at T = 10K. To ensure that the experiments were carried out with identical carrier densities for any particular excitation power density, we used laser pulses of duration ~100fs at a repetition rate of 400 kHz. For both types of structure efficiency droop was observed to occur for carrier densities of above 7×1011 cm-2pulse-1 per quantum well; also both structures exhibited similar spectral broadening in the droop regime. These results show that efficiency droop is intrinsic in InGaN quantum wells, whether polar or non-polar, and is a function, specifically, of carrier density.

AB - We report on a comparative study of efficiency droop in polar and non-polar InGaN quantum well structures at T = 10K. To ensure that the experiments were carried out with identical carrier densities for any particular excitation power density, we used laser pulses of duration ~100fs at a repetition rate of 400 kHz. For both types of structure efficiency droop was observed to occur for carrier densities of above 7×1011 cm-2pulse-1 per quantum well; also both structures exhibited similar spectral broadening in the droop regime. These results show that efficiency droop is intrinsic in InGaN quantum wells, whether polar or non-polar, and is a function, specifically, of carrier density.

U2 - 10.1063/1.4954236

DO - 10.1063/1.4954236

M3 - Article

SN - 0003-6951

VL - 106

JO - Applied Physics Letters

JF - Applied Physics Letters

M1 - 252101

ER -

Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells

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