TY - JOUR
T1 - Complementary integrated circuits based on n-type and p-type oxide semiconductors for applications beyond flat-panel displays
AU - Li, Yunpeng
AU - Zhang, Jiawei
AU - Yang, Jin
AU - Yuan, Yuzhuo
AU - Hu, Zhenjia
AU - Lin, Zhaojun
AU - Song, Aimin
AU - Xin, Qiang
N1 - Funding Information:
Manuscript received September 4, 2018; revised November 16, 2018; accepted December 13, 2018. Date of publication January 1, 2019; date of current version January 22, 2019. This work was supported in part by the National Key Research and Development Program of China under Grant 2016YFA0301200 and Grant 2016 YFA0201800, in part by Engineering and Physical Sciences Research Council under Grant EP/N021258/1, in part by China Postdoctoral Science Foundation Funded Project under Grant 2016M590634, in part by the Key Research and Development Program of Shandong Province under Grant 2017GGX10111 and Grant 2017GGX10121, in part by the Natural Science Foundation of Shandong Province under Grant ZR2018MF029, in part by the Natural Science Foundation of Jiangsu Province under Grant BK20151255, in part by the Shenzhen Projects of Science and Technology under Grant JCYJ20170818101939090, in part by the Suzhou Planning Projects of Science and Technology under Grant SYG201527 and Grant SYG201616, and in part by the Fundamental Research Funds of Shandong University under Grant 2016WLJH44. The review of this paper was arranged by Editor X. Guo. (Corresponding author: Yunpeng Li.) Y. Li, J. Yang, Y. Yuan, Z. Hu, Z. Lin, and Q. Xin are with the State Key Laboratory of Crystal Materials, Center of Nanoelectronics, School of Microelectronics, Shandong University, Jinan 250100, China (e-mail: [email protected]).
Publisher Copyright:
© 1963-2012 IEEE.
PY - 2019/2
Y1 - 2019/2
N2 - Oxide semiconductors are highly attractive for fabrication of large-area thin-film electronics because of their high electrical performance, low process temperature, high uniformity, and ease of industrial manufacturing. n-type oxide semiconductors, such as InGaZnO, are highly developed and have already been commercialized for backplane drivers of flat-panel displays. To date, developing CMOS technology is still an urgent issue in order to build low-power electronic circuits based on oxide semiconductors. In this paper, various CMOS circuits, including inverters, NAND, NOR, XOR, d-latches, full adders, and 7-, 11-, 21-, and 51-stage ring oscillators (ROs), are fabricated based on sputtered p-type tin monoxide and n-type InGaZnO. The inverters show rail-to-rail output voltage behavior, low average static power consumption of 8.84 nW, high noise margin level up to 40% supply voltage, high yield of 98%, and high uniformity with negligible standard deviation. The NAND, NOR, XOR, d-latches, and full adders show desirably ideal input-output characteristics. The performances of ROs indicate small stage delay of ∼ 1μs, extremely high uniformity and high yieldwhich are essential for large-area thin-film electronics. This paper may inspire constructions of low power, large area, large scale, and high-performance transparent/flexible CMOS circuits fully based on oxide semiconductors for applications beyond flat-panel displays.
AB - Oxide semiconductors are highly attractive for fabrication of large-area thin-film electronics because of their high electrical performance, low process temperature, high uniformity, and ease of industrial manufacturing. n-type oxide semiconductors, such as InGaZnO, are highly developed and have already been commercialized for backplane drivers of flat-panel displays. To date, developing CMOS technology is still an urgent issue in order to build low-power electronic circuits based on oxide semiconductors. In this paper, various CMOS circuits, including inverters, NAND, NOR, XOR, d-latches, full adders, and 7-, 11-, 21-, and 51-stage ring oscillators (ROs), are fabricated based on sputtered p-type tin monoxide and n-type InGaZnO. The inverters show rail-to-rail output voltage behavior, low average static power consumption of 8.84 nW, high noise margin level up to 40% supply voltage, high yield of 98%, and high uniformity with negligible standard deviation. The NAND, NOR, XOR, d-latches, and full adders show desirably ideal input-output characteristics. The performances of ROs indicate small stage delay of ∼ 1μs, extremely high uniformity and high yieldwhich are essential for large-area thin-film electronics. This paper may inspire constructions of low power, large area, large scale, and high-performance transparent/flexible CMOS circuits fully based on oxide semiconductors for applications beyond flat-panel displays.
KW - CMOS
KW - IC
KW - oxide semiconductor
KW - thin-film transistor (TFT)
UR - http://www.scopus.com/inward/record.url?scp=85060523633&partnerID=8YFLogxK
UR - http://www.mendeley.com/research/complementary-integrated-circuits-based-ntype-ptype-oxide-semiconductors-applications-beyond-flatpan
U2 - 10.1109/TED.2018.2887270
DO - 10.1109/TED.2018.2887270
M3 - Article
SN - 0018-9383
VL - 66
SP - 950
EP - 956
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 2
ER -