Complementary metal oxide semiconductor integration of epitaxial Gd2O3

Max C Lemme; HDB Gottlob; TJ Echtermeyer; M Schmidt; H Kurz; R Endres; U Schwalke; M Czernohorkky; D Tetzlaff; HJ Osten

Complementary metal oxide semiconductor integration of epitaxial Gd2O3

Max C Lemme, HDB Gottlob, TJ Echtermeyer, M Schmidt, H Kurz, R Endres, U Schwalke, M Czernohorkky, D Tetzlaff, HJ Osten

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	258-261
Number of pages	4
Journal	Journal of Vacuum Science and Technology. Part B. Nanotechnology & Microelectronics
Volume	27
Issue number	1
Publication status	Published - 2009

Cite this

@article{24e8aa8496be43fd83570a3f0060ec6a,

title = "Complementary metal oxide semiconductor integration of epitaxial Gd2O3",

author = "Lemme, {Max C} and HDB Gottlob and TJ Echtermeyer and M Schmidt and H Kurz and R Endres and U Schwalke and M Czernohorkky and D Tetzlaff and HJ Osten",

year = "2009",

language = "English",

volume = "27",

pages = "258--261",

journal = "Journal of Vacuum Science and Technology. Part B. Nanotechnology & Microelectronics ",

issn = "2166-2754",

publisher = "American Institute of Physics",

number = "1",

}

TY - JOUR

T1 - Complementary metal oxide semiconductor integration of epitaxial Gd2O3

AU - Lemme, Max C

AU - Gottlob, HDB

AU - Echtermeyer, TJ

AU - Schmidt, M

AU - Kurz, H

AU - Endres, R

AU - Schwalke, U

AU - Czernohorkky, M

AU - Tetzlaff, D

AU - Osten, HJ

PY - 2009

Y1 - 2009

M3 - Article

SN - 2166-2754

VL - 27

SP - 258

EP - 261

JO - Journal of Vacuum Science and Technology. Part B. Nanotechnology & Microelectronics

JF - Journal of Vacuum Science and Technology. Part B. Nanotechnology & Microelectronics

IS - 1

ER -