Continuous flow supercritical chemical fluid deposition of optoelectronic quality CdS

Jixin Yang; Jason R. Hyde; James W. Wilson; Kanad Mallik; Pier J. Sazio; Paul O'Brien; Mohamed A. Malik; Mohammad Afzaal; Chinh Q. Nguyen; Michael W. George; Steven M. Howdle; David C. Smith

doi:10.1002/adma.200803751

Continuous flow supercritical chemical fluid deposition of optoelectronic quality CdS

Jixin Yang, Jason R. Hyde, James W. Wilson, Kanad Mallik, Pier J. Sazio, Paul O'Brien, Mohamed A. Malik, Mohammad Afzaal, Chinh Q. Nguyen, Michael W. George, Steven M. Howdle, David C. Smith

Research output: Contribution to journal › Article › peer-review

Abstract

Supercritical chemical fluid deposition (SCFD) has been shown to have remarkable advantages for deposition inside nanostructured templates however so far the technique has mostly been used to deposit metals. In this paper we present the SCFD of optoelectronic grade CdS. The quality of this material is demonstrated by a range of techniques including reflectivity (A) and photoluminescence spectroscopy (B and C). At 4 K the bandedge luminescence has a full-widthat-half-maximum linewidth of 30meV comparable with that of single crystal CdS. © 2009 WILEY-VCH Verlag GmbH & Co. KGaA.

Original language	English
Pages (from-to)	4115-4119
Number of pages	4
Journal	Advanced Materials
Volume	21
Issue number	41
DOIs	https://doi.org/10.1002/adma.200803751
Publication status	Published - 6 Nov 2009

Access to Document

10.1002/adma.200803751

http://www3.interscience.wiley.com/cgi-bin/fulltext/122465536/PDFSTART

Cite this

@article{d40fd8be7a5845f9a2921249822bf876,

title = "Continuous flow supercritical chemical fluid deposition of optoelectronic quality CdS",

abstract = "Supercritical chemical fluid deposition (SCFD) has been shown to have remarkable advantages for deposition inside nanostructured templates however so far the technique has mostly been used to deposit metals. In this paper we present the SCFD of optoelectronic grade CdS. The quality of this material is demonstrated by a range of techniques including reflectivity (A) and photoluminescence spectroscopy (B and C). At 4 K the bandedge luminescence has a full-widthat-half-maximum linewidth of 30meV comparable with that of single crystal CdS. {\textcopyright} 2009 WILEY-VCH Verlag GmbH \& Co. KGaA.",

author = "Jixin Yang and Hyde, \{Jason R.\} and Wilson, \{James W.\} and Kanad Mallik and Sazio, \{Pier J.\} and Paul O'Brien and Malik, \{Mohamed A.\} and Mohammad Afzaal and Nguyen, \{Chinh Q.\} and George, \{Michael W.\} and Howdle, \{Steven M.\} and Smith, \{David C.\}",

note = "Times Cited: 7",

year = "2009",

month = nov,

day = "6",

doi = "10.1002/adma.200803751",

language = "English",

volume = "21",

pages = "4115--4119",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "John Wiley \& Sons Ltd",

number = "41",

}

TY - JOUR

T1 - Continuous flow supercritical chemical fluid deposition of optoelectronic quality CdS

AU - Yang, Jixin

AU - Hyde, Jason R.

AU - Wilson, James W.

AU - Mallik, Kanad

AU - Sazio, Pier J.

AU - O'Brien, Paul

AU - Malik, Mohamed A.

AU - Afzaal, Mohammad

AU - Nguyen, Chinh Q.

AU - George, Michael W.

AU - Howdle, Steven M.

AU - Smith, David C.

N1 - Times Cited: 7

PY - 2009/11/6

Y1 - 2009/11/6

N2 - Supercritical chemical fluid deposition (SCFD) has been shown to have remarkable advantages for deposition inside nanostructured templates however so far the technique has mostly been used to deposit metals. In this paper we present the SCFD of optoelectronic grade CdS. The quality of this material is demonstrated by a range of techniques including reflectivity (A) and photoluminescence spectroscopy (B and C). At 4 K the bandedge luminescence has a full-widthat-half-maximum linewidth of 30meV comparable with that of single crystal CdS. © 2009 WILEY-VCH Verlag GmbH & Co. KGaA.

AB - Supercritical chemical fluid deposition (SCFD) has been shown to have remarkable advantages for deposition inside nanostructured templates however so far the technique has mostly been used to deposit metals. In this paper we present the SCFD of optoelectronic grade CdS. The quality of this material is demonstrated by a range of techniques including reflectivity (A) and photoluminescence spectroscopy (B and C). At 4 K the bandedge luminescence has a full-widthat-half-maximum linewidth of 30meV comparable with that of single crystal CdS. © 2009 WILEY-VCH Verlag GmbH & Co. KGaA.

UR - https://www.scopus.com/pages/publications/70350475633

U2 - 10.1002/adma.200803751

DO - 10.1002/adma.200803751

M3 - Article

SN - 0935-9648

VL - 21

SP - 4115

EP - 4119

JO - Advanced Materials

JF - Advanced Materials

IS - 41

ER -

Continuous flow supercritical chemical fluid deposition of optoelectronic quality CdS

Abstract

Access to Document

Other files and links

Fingerprint

Cite this