@inproceedings{0d48b6d14e094c89bf0c80631abb0f16,
title = "Continuous-wave terahertz photomixing in low-temperature InGaAs",
abstract = "Highly-resistive low-temperature grown InGaAs, with a sub-500 fs carrier lifetime, is used in an all-optoelectronic continuous-wave terahertz photomixer system based on diode lasers. Interdigitated electrodes fabricated on epitaxial low-temperature grown In0.3Ga0.7As are used as photomixers to generate and detect radiation from microwave frequencies (<100 GHz) to beyond 1.0 THz.",
author = "C. Baker and Gregory, {I. S.} and Tribe, {W. R.} and Evans, {M. J.} and M. Missous and Linfield, {E. H.}",
year = "2004",
month = dec,
day = "1",
language = "English",
isbn = "0780384903",
series = "Conference Digest of the 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics",
pages = "367--368",
editor = "M. Thumm and W. Wiesbeck",
booktitle = "Conference Digest of the 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics",
note = "Conference Digest of the 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics ; Conference date: 27-09-2004 Through 01-10-2004",
}