Control of nuclear spin in InGaAs quantum dots

M. N. Makhonin, A. I. Tartakovskii, T. Wright, F. Pulizzi, J. Skiba-Szymanska, M. S. Skolnick, V. I. Fal'ko, P. W. Fry, A. Tahraoui, W. K. Ng, M. Hopkinson

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Abstract

    Control of the dynamic nuclear polarization is achieved in individual InGaAs dots embedded in a p-i-n diode by employing the vertical electric field controlling carrier tunneling rates. Nuclear magnetic fields up to 1.7T are observed.

    Original languageEnglish
    Title of host publicationQuantum Electronics and Laser Science Conference, QELS 2006
    PublisherOptical Society of America
    ISBN (Print)1557528136, 9781557528131
    Publication statusPublished - 2006
    EventQuantum Electronics and Laser Science Conference, QELS 2006 - Long Beach, CA, United States
    Duration: 21 May 200621 May 2006

    Conference

    ConferenceQuantum Electronics and Laser Science Conference, QELS 2006
    Country/TerritoryUnited States
    CityLong Beach, CA
    Period21/05/0621/05/06

    Research Beacons, Institutes and Platforms

    • National Graphene Institute

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