Control of Strain in GaSbAs/InAs/GaAs Quantum Dots

V Haxha, I Drouzas, J M Ulloa, M Bozkurt, P M Koenraad, D J Mowbray, H Y Liu, M J Steer, M Hopkinson, M A Migliorato, R A Taylor (Editor)

    Research output: Chapter in Book/Report/Conference proceedingChapter


    We discuss strain simulations of quantum dot structures covered with a GaSbAs strain reducing capping layer in the presence of Sb segregation. Cross Sectional Scanning Tunneling Microscopy shows strong Sb and In segregation in the material surrounding the quantum dot. Using the three layer model originally proposed for the SiGe system by D. J. Godbey, M. G. Ancona, J. Vac. Sci. Technol. A 15, 976 (1997) we accurately calculate the segregation profile and include a non uniform composition to our models. Using atomistic modeling, we present strain maps of the quantum dot structures that show the propagation of the strain into the GaAs region is strongly affected by the shape and composition of the strain reduction layer.
    Original languageEnglish
    Title of host publicationQuantum Dots 2010
    Publication statusPublished - Apr 2010

    Publication series

    NameJournal of Physics Conference Series


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