Control of Strain in GaSbAs/InAs/GaAs Quantum Dots

V Haxha; I Drouzas; J M Ulloa; M Bozkurt; P M Koenraad; D J Mowbray; H Y Liu; M J Steer; M Hopkinson; M A Migliorato; R A Taylor

doi:012065 10.1088/1742-6596/245/1/012065

Control of Strain in GaSbAs/InAs/GaAs Quantum Dots

V Haxha, I Drouzas, J M Ulloa, M Bozkurt, P M Koenraad, D J Mowbray, H Y Liu, M J Steer, M Hopkinson, M A Migliorato, R A Taylor (Editor)

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Abstract

We discuss strain simulations of quantum dot structures covered with a GaSbAs strain reducing capping layer in the presence of Sb segregation. Cross Sectional Scanning Tunneling Microscopy shows strong Sb and In segregation in the material surrounding the quantum dot. Using the three layer model originally proposed for the SiGe system by D. J. Godbey, M. G. Ancona, J. Vac. Sci. Technol. A 15, 976 (1997) we accurately calculate the segregation profile and include a non uniform composition to our models. Using atomistic modeling, we present strain maps of the quantum dot structures that show the propagation of the strain into the GaAs region is strongly affected by the shape and composition of the strain reduction layer.

Original language	English
Title of host publication	Quantum Dots 2010
Volume	245
DOIs	https://doi.org/012065 10.1088/1742-6596/245/1/012065
Publication status	Published - Apr 2010

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Name	Journal of Physics Conference Series

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012065 10.1088/1742-6596/245/1/012065

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title = "Control of Strain in GaSbAs/InAs/GaAs Quantum Dots",

abstract = "We discuss strain simulations of quantum dot structures covered with a GaSbAs strain reducing capping layer in the presence of Sb segregation. Cross Sectional Scanning Tunneling Microscopy shows strong Sb and In segregation in the material surrounding the quantum dot. Using the three layer model originally proposed for the SiGe system by D. J. Godbey, M. G. Ancona, J. Vac. Sci. Technol. A 15, 976 (1997) we accurately calculate the segregation profile and include a non uniform composition to our models. Using atomistic modeling, we present strain maps of the quantum dot structures that show the propagation of the strain into the GaAs region is strongly affected by the shape and composition of the strain reduction layer.",

author = "V Haxha and I Drouzas and Ulloa, {J M} and M Bozkurt and Koenraad, {P M} and Mowbray, {D J} and Liu, {H Y} and Steer, {M J} and M Hopkinson and Migliorato, {M A} and Taylor, {R A}",

note = "Times Cited: 0 Conference on Quantum Dots 2010 (QD2010) APR 26-30, 2010 Nottingham, ENGLAND",

year = "2010",

month = apr,

doi = "012065 10.1088/1742-6596/245/1/012065",

language = "English",

isbn = "1742-6588 *****************",

volume = "245",

series = "Journal of Physics Conference Series",

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TY - CHAP

T1 - Control of Strain in GaSbAs/InAs/GaAs Quantum Dots

AU - Haxha, V

AU - Drouzas, I

AU - Ulloa, J M

AU - Bozkurt, M

AU - Koenraad, P M

AU - Mowbray, D J

AU - Liu, H Y

AU - Steer, M J

AU - Hopkinson, M

AU - Migliorato, M A

A2 - Taylor, R A

N1 - Times Cited: 0 Conference on Quantum Dots 2010 (QD2010) APR 26-30, 2010 Nottingham, ENGLAND

PY - 2010/4

Y1 - 2010/4

N2 - We discuss strain simulations of quantum dot structures covered with a GaSbAs strain reducing capping layer in the presence of Sb segregation. Cross Sectional Scanning Tunneling Microscopy shows strong Sb and In segregation in the material surrounding the quantum dot. Using the three layer model originally proposed for the SiGe system by D. J. Godbey, M. G. Ancona, J. Vac. Sci. Technol. A 15, 976 (1997) we accurately calculate the segregation profile and include a non uniform composition to our models. Using atomistic modeling, we present strain maps of the quantum dot structures that show the propagation of the strain into the GaAs region is strongly affected by the shape and composition of the strain reduction layer.

AB - We discuss strain simulations of quantum dot structures covered with a GaSbAs strain reducing capping layer in the presence of Sb segregation. Cross Sectional Scanning Tunneling Microscopy shows strong Sb and In segregation in the material surrounding the quantum dot. Using the three layer model originally proposed for the SiGe system by D. J. Godbey, M. G. Ancona, J. Vac. Sci. Technol. A 15, 976 (1997) we accurately calculate the segregation profile and include a non uniform composition to our models. Using atomistic modeling, we present strain maps of the quantum dot structures that show the propagation of the strain into the GaAs region is strongly affected by the shape and composition of the strain reduction layer.

U2 - 012065 10.1088/1742-6596/245/1/012065

DO - 012065 10.1088/1742-6596/245/1/012065

M3 - Chapter

SN - 1742-6588 *****************

VL - 245

T3 - Journal of Physics Conference Series

BT - Quantum Dots 2010

ER -

Control of Strain in GaSbAs/InAs/GaAs Quantum Dots

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