Controllable Coexistence of Threshold and Non-volatile Crosspoint Memory for Highly Linear Synaptic Device Applications

Engineering

• Resistive 100%
• Nonlinearity 50%
• Simulation Result 50%
• Pulse Duration 50%
• Recognition Accuracy 50%
• Current Limit 50%
• Pattern Recognition 50%
• Cross Point 50%
• Semiconducting Material 50%
• Data Retention 50%

Material Science

• Density 100%
• Film 50%
• Semiconducting Material 50%
• Pattern Recognition 50%
• Neuromorphic Computing 50%