Corrections to “Low-Voltage IGZO TFTs Using Solution-Deposited OTS-Modified Ta2O5              Dielectric”

N. Mohammadian; B. C. Das; L. A. Majewski

doi:10.1109/TED.2020.3012115

Corrections to “Low-Voltage IGZO TFTs Using Solution-Deposited OTS-Modified Ta₂O₅ Dielectric”

N. Mohammadian, B. C. Das, L. A. Majewski

EEE - Academic & Research

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Abstract

Unfortunately, there are few typographical errors in the above paper. First of all, the Equation (4) is incomplete and the corrected formula is given here. Secondly, the unit of the interfacial trap density (Nit) is corrected in three places. Thirdly, the caption of Fig. 6 is corrected to accurately reflect the device structure. The corrections have no influence on the discussion and conclusions of the paper.
Index Terms—Anodization, indium gallium zinc oxide (IGZO), low-voltage thin film transistors (TFTs), self- assembled monolayer (SAM), tantalum pentoxide.

Original language	English
Pages (from-to)	4545-4545
Journal	IEEE Transactions on Electron Devices
Volume	67
Issue number	10
Early online date	22 Sept 2020
DOIs	https://doi.org/10.1109/TED.2020.3012115
Publication status	Published - 22 Sept 2020

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Corrections to “Low-Voltage IGZO TFTs Using Solution-Deposited OTS-Modified Ta2O5 Dielectric”Accepted author manuscript, 197 KB

https://ieeexplore.ieee.org/document/9204520/

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title = "Corrections to “Low-Voltage IGZO TFTs Using Solution-Deposited OTS-Modified Ta2O5 Dielectric”",

abstract = "Unfortunately, there are few typographical errors in the above paper. First of all, the Equation (4) is incomplete and the corrected formula is given here. Secondly, the unit of the interfacial trap density (Nit) is corrected in three places. Thirdly, the caption of Fig. 6 is corrected to accurately reflect the device structure. The corrections have no influence on the discussion and conclusions of the paper.Index Terms—Anodization, indium gallium zinc oxide (IGZO), low-voltage thin film transistors (TFTs), self- assembled monolayer (SAM), tantalum pentoxide.",

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AU - Das, B. C.

AU - Majewski, L. A.

PY - 2020/9/22

Y1 - 2020/9/22

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AB - Unfortunately, there are few typographical errors in the above paper. First of all, the Equation (4) is incomplete and the corrected formula is given here. Secondly, the unit of the interfacial trap density (Nit) is corrected in three places. Thirdly, the caption of Fig. 6 is corrected to accurately reflect the device structure. The corrections have no influence on the discussion and conclusions of the paper.Index Terms—Anodization, indium gallium zinc oxide (IGZO), low-voltage thin film transistors (TFTs), self- assembled monolayer (SAM), tantalum pentoxide.

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Corrections to “Low-Voltage IGZO TFTs Using Solution-Deposited OTS-Modified Ta2O5 Dielectric”

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Corrections to “Low-Voltage IGZO TFTs Using Solution-Deposited OTS-Modified Ta₂O₅ Dielectric”