Correlations in the local density of states probed by single electron tunneling

J. Könemann*, P. König, E. McCann, V.I. Fal'ko, R.J. Haug

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Single electron tunneling via impurity states has been used to probe the local density of states (LDOS) of the emitter of a vertical resonant tunneling device. In this work, we focus on the correlation properties of the LDOS fluctuations. The analysis of the shape of the LDOS-correlation function indicates a reduced effective dimensionality of the electronic correlation in the emitter, which can be explained by the presence of a growth-induced interface in the sample structure.
Original languageEnglish
Pages (from-to)853-856
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume12
Issue number1-4
DOIs
Publication statusPublished - Jan 2002

Keywords

  • electron tunneling
  • local density of states

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