Abstract
Single electron tunneling via impurity states has been used to probe the local density of states (LDOS) of the emitter of a vertical resonant tunneling device. In this work, we focus on the correlation properties of the LDOS fluctuations. The analysis of the shape of the LDOS-correlation function indicates a reduced effective dimensionality of the electronic correlation in the emitter, which can be explained by the presence of a growth-induced interface in the sample structure.
Original language | English |
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Pages (from-to) | 853-856 |
Number of pages | 4 |
Journal | Physica E: Low-Dimensional Systems and Nanostructures |
Volume | 12 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - Jan 2002 |
Keywords
- electron tunneling
- local density of states