Cryogenic operation of silicon detectors

P. Collins; I. B M Barnett; P. Bartalini; W. Bell; P. Berglund; W. De Boer; S. Buontempo; K. Borer; T. Bowcock; J. Buytaert; L. Casagrande; V. Chabaud; P. Chochula; V. Cindro; C. Da Via; S. Devine; H. Dijkstra; B. Dezillie; Z. Dimcovski; O. Dormond; V. Eremin; A. Esposito; R. Frei; V. Granata; E. Grigoriev; F. Hauler; S. Heising; S. Janos; L. Jungermann; Z. Li; C. Lourenço; M. Mikuž; T. O. Niinikoski; V. O'Shea; V. G. Palmieri; S. Paul; C. Parkes; G. Ruggiero; T. Ruf; S. Saladino; L. Schmitt; K. Smith; I. Stavitski; E. Verbitskaya; F. Vitobello; M. Zavrtanik

doi:10.1016/S0168-9002(00)00183-2

Cryogenic operation of silicon detectors

P. Collins, I. B M Barnett, P. Bartalini, W. Bell, P. Berglund, W. De Boer, S. Buontempo, K. Borer, T. Bowcock, J. Buytaert, L. Casagrande, V. Chabaud, P. Chochula, V. Cindro, C. Da Via, S. Devine, H. Dijkstra, B. Dezillie, Z. Dimcovski, O. DormondV. Eremin, A. Esposito, R. Frei, V. Granata, E. Grigoriev, F. Hauler, S. Heising, S. Janos, L. Jungermann, Z. Li, C. Lourenço, M. Mikuž, T. O. Niinikoski, V. O'Shea, V. G. Palmieri, S. Paul, C. Parkes, G. Ruggiero, T. Ruf, S. Saladino, L. Schmitt, K. Smith, I. Stavitski, E. Verbitskaya, F. Vitobello, M. Zavrtanik

Research output: Contribution to journal › Article › peer-review

Abstract

This paper reports on measurements at cryogenic temperatures of a silicon microstrip detector irradiated with 24 GeV protons to a fluence of 3.5×1014 p/cm2 and of a p-n junction diode detector irradiated to a similar fluence. At temperatures below 130 K a recovery of charge collection efficiency and resolution is observed. Under reverse bias conditions this recovery degrades in time towards some saturated value. The recovery is interpreted qualitatively as changes in the effective space charge of the detector causing alterations in the depletion voltage.

Original language	English
Pages (from-to)	151-159
Number of pages	8
Journal	Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment
Volume	447
Issue number	1
DOIs	https://doi.org/10.1016/S0168-9002(00)00183-2
Publication status	Published - 1 Jun 2000

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10.1016/S0168-9002(00)00183-2

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Collins, P., Barnett, I. B. M., Bartalini, P., Bell, W., Berglund, P., De Boer, W., Buontempo, S., Borer, K., Bowcock, T., Buytaert, J., Casagrande, L., Chabaud, V., Chochula, P., Cindro, V., Via, C. D., Devine, S., Dijkstra, H., Dezillie, B., Dimcovski, Z., ... Zavrtanik, M. (2000). Cryogenic operation of silicon detectors. Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment , 447(1), 151-159. https://doi.org/10.1016/S0168-9002(00)00183-2

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title = "Cryogenic operation of silicon detectors",

abstract = "This paper reports on measurements at cryogenic temperatures of a silicon microstrip detector irradiated with 24 GeV protons to a fluence of 3.5×1014 p/cm2 and of a p-n junction diode detector irradiated to a similar fluence. At temperatures below 130 K a recovery of charge collection efficiency and resolution is observed. Under reverse bias conditions this recovery degrades in time towards some saturated value. The recovery is interpreted qualitatively as changes in the effective space charge of the detector causing alterations in the depletion voltage.",

author = "P. Collins and Barnett, {I. B M} and P. Bartalini and W. Bell and P. Berglund and {De Boer}, W. and S. Buontempo and K. Borer and T. Bowcock and J. Buytaert and L. Casagrande and V. Chabaud and P. Chochula and V. Cindro and Via, {C. Da} and S. Devine and H. Dijkstra and B. Dezillie and Z. Dimcovski and O. Dormond and V. Eremin and A. Esposito and R. Frei and V. Granata and E. Grigoriev and F. Hauler and S. Heising and S. Janos and L. Jungermann and Z. Li and C. Louren{\c c}o and M. Miku{\v z} and Niinikoski, {T. O.} and V. O'Shea and Palmieri, {V. G.} and S. Paul and C. Parkes and G. Ruggiero and T. Ruf and S. Saladino and L. Schmitt and K. Smith and I. Stavitski and E. Verbitskaya and F. Vitobello and M. Zavrtanik",

year = "2000",

month = jun,

day = "1",

doi = "10.1016/S0168-9002(00)00183-2",

language = "English",

volume = "447",

pages = "151--159",

journal = "Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment ",

issn = "0168-9002",

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Collins, P, Barnett, IBM, Bartalini, P, Bell, W, Berglund, P, De Boer, W, Buontempo, S, Borer, K, Bowcock, T, Buytaert, J, Casagrande, L, Chabaud, V, Chochula, P, Cindro, V, Via, CD, Devine, S, Dijkstra, H, Dezillie, B, Dimcovski, Z, Dormond, O, Eremin, V, Esposito, A, Frei, R, Granata, V, Grigoriev, E, Hauler, F, Heising, S, Janos, S, Jungermann, L, Li, Z, Lourenço, C, Mikuž, M, Niinikoski, TO, O'Shea, V, Palmieri, VG, Paul, S, Parkes, C, Ruggiero, G, Ruf, T, Saladino, S, Schmitt, L, Smith, K, Stavitski, I, Verbitskaya, E, Vitobello, F & Zavrtanik, M 2000, 'Cryogenic operation of silicon detectors', Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment , vol. 447, no. 1, pp. 151-159. https://doi.org/10.1016/S0168-9002(00)00183-2

TY - JOUR

T1 - Cryogenic operation of silicon detectors

AU - Collins, P.

AU - Barnett, I. B M

AU - Bartalini, P.

AU - Bell, W.

AU - Berglund, P.

AU - De Boer, W.

AU - Buontempo, S.

AU - Borer, K.

AU - Bowcock, T.

AU - Buytaert, J.

AU - Casagrande, L.

AU - Chabaud, V.

AU - Chochula, P.

AU - Cindro, V.

AU - Via, C. Da

AU - Devine, S.

AU - Dijkstra, H.

AU - Dezillie, B.

AU - Dimcovski, Z.

AU - Dormond, O.

AU - Eremin, V.

AU - Esposito, A.

AU - Frei, R.

AU - Granata, V.

AU - Grigoriev, E.

AU - Hauler, F.

AU - Heising, S.

AU - Janos, S.

AU - Jungermann, L.

AU - Li, Z.

AU - Lourenço, C.

AU - Mikuž, M.

AU - Niinikoski, T. O.

AU - O'Shea, V.

AU - Palmieri, V. G.

AU - Paul, S.

AU - Parkes, C.

AU - Ruggiero, G.

AU - Ruf, T.

AU - Saladino, S.

AU - Schmitt, L.

AU - Smith, K.

AU - Stavitski, I.

AU - Verbitskaya, E.

AU - Vitobello, F.

AU - Zavrtanik, M.

PY - 2000/6/1

Y1 - 2000/6/1

N2 - This paper reports on measurements at cryogenic temperatures of a silicon microstrip detector irradiated with 24 GeV protons to a fluence of 3.5×1014 p/cm2 and of a p-n junction diode detector irradiated to a similar fluence. At temperatures below 130 K a recovery of charge collection efficiency and resolution is observed. Under reverse bias conditions this recovery degrades in time towards some saturated value. The recovery is interpreted qualitatively as changes in the effective space charge of the detector causing alterations in the depletion voltage.

AB - This paper reports on measurements at cryogenic temperatures of a silicon microstrip detector irradiated with 24 GeV protons to a fluence of 3.5×1014 p/cm2 and of a p-n junction diode detector irradiated to a similar fluence. At temperatures below 130 K a recovery of charge collection efficiency and resolution is observed. Under reverse bias conditions this recovery degrades in time towards some saturated value. The recovery is interpreted qualitatively as changes in the effective space charge of the detector causing alterations in the depletion voltage.

U2 - 10.1016/S0168-9002(00)00183-2

DO - 10.1016/S0168-9002(00)00183-2

M3 - Article

SN - 0168-9002

VL - 447

SP - 151

EP - 159

JO - Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment

JF - Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment

IS - 1

ER -

Cryogenic operation of silicon detectors

Abstract

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