Current crowding effects in SOI-SiGe HBT's with low doped emitters

S. Hall, O. Buiu, A. C. Lamb, H. A W El Mubarek, P. Ashburn

    Research output: Contribution to journalArticlepeer-review


    © 2003 IEEE.Anomalous limitation of collector and base current in SOI SiGe HBTs at moderate bias levels iv shown to be the result of current crowding in the low doped emitter rather than in the base as is the case for homojunction transistors. Experimental results from devices with decreasing emitter window dimension, re-enforced by 2- D simulation, show clearly a trend for crowding at the centre as the emitter resistance increases. The results have significance for achieving full optimisation of HBTs and in particular, for medium power devices.
    Original languageEnglish
    Article number1256874
    Pages (from-to)303-306
    Number of pages3
    JournalEuropean Solid-State Device Research Conference. Proceedings
    Publication statusPublished - 2003


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