Current-voltage and light-current characteristics in highly strained InGaAs/lnAlAs quantum cascade laser structures

S. Banerjee; K. A. Shore; C. J. Mitchell; J. L. Sly; M. Missous

doi:10.1049/ip-cds:20045042

Current-voltage and light-current characteristics in highly strained InGaAs/lnAlAs quantum cascade laser structures

S. Banerjee, K. A. Shore, C. J. Mitchell, J. L. Sly, M. Missous

Bangor University

Research output: Contribution to journal › Article › peer-review

Abstract

Growth of electroluminescent devices based on strain-compensated In _xGa_1-xAs/ In_yAl_1-yAs has been undertaken. The very high conduction band offset of the strained material allows the design of such devices with very short emission wavelength. Device design and material characterisation for 2 μm emission has been undertaken. An analysis of the direct current amplitude modulation response of the strained structure is also performed. Strong room temperature emission with peaks around 1.55 μm dependent upon driving current has been observed under continuous wave reverse operational bias. This reverse bias emission was observed owing to the presence of interface states. Moreover experimentally measured current-voltage characteristics in forward bias are found to be in good agreement with theoretical predictions.

Original language	English
Pages (from-to)	497-501
Number of pages	5
Journal	IEE Proceedings: Circuits, Devices and Systems
Volume	152
Issue number	5
DOIs	https://doi.org/10.1049/ip-cds:20045042
Publication status	Published - 1 Oct 2005

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title = "Current-voltage and light-current characteristics in highly strained InGaAs/lnAlAs quantum cascade laser structures",

abstract = "Growth of electroluminescent devices based on strain-compensated In xGa1-xAs/ InyAl1-yAs has been undertaken. The very high conduction band offset of the strained material allows the design of such devices with very short emission wavelength. Device design and material characterisation for 2 μm emission has been undertaken. An analysis of the direct current amplitude modulation response of the strained structure is also performed. Strong room temperature emission with peaks around 1.55 μm dependent upon driving current has been observed under continuous wave reverse operational bias. This reverse bias emission was observed owing to the presence of interface states. Moreover experimentally measured current-voltage characteristics in forward bias are found to be in good agreement with theoretical predictions.",

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T1 - Current-voltage and light-current characteristics in highly strained InGaAs/lnAlAs quantum cascade laser structures

AU - Banerjee, S.

AU - Shore, K. A.

AU - Mitchell, C. J.

AU - Sly, J. L.

AU - Missous, M.

PY - 2005/10/1

Y1 - 2005/10/1

N2 - Growth of electroluminescent devices based on strain-compensated In xGa1-xAs/ InyAl1-yAs has been undertaken. The very high conduction band offset of the strained material allows the design of such devices with very short emission wavelength. Device design and material characterisation for 2 μm emission has been undertaken. An analysis of the direct current amplitude modulation response of the strained structure is also performed. Strong room temperature emission with peaks around 1.55 μm dependent upon driving current has been observed under continuous wave reverse operational bias. This reverse bias emission was observed owing to the presence of interface states. Moreover experimentally measured current-voltage characteristics in forward bias are found to be in good agreement with theoretical predictions.

AB - Growth of electroluminescent devices based on strain-compensated In xGa1-xAs/ InyAl1-yAs has been undertaken. The very high conduction band offset of the strained material allows the design of such devices with very short emission wavelength. Device design and material characterisation for 2 μm emission has been undertaken. An analysis of the direct current amplitude modulation response of the strained structure is also performed. Strong room temperature emission with peaks around 1.55 μm dependent upon driving current has been observed under continuous wave reverse operational bias. This reverse bias emission was observed owing to the presence of interface states. Moreover experimentally measured current-voltage characteristics in forward bias are found to be in good agreement with theoretical predictions.

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SN - 1350-2409

VL - 152

SP - 497

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JO - IEE Proceedings: Circuits, Devices and Systems

JF - IEE Proceedings: Circuits, Devices and Systems

IS - 5

ER -

Current-voltage and light-current characteristics in highly strained InGaAs/lnAlAs quantum cascade laser structures

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