Damping of exciton rabi rotations by acoustic phonons in optically excited InGaAs/GaAs quantum dots

A. J. Ramsay; Achanta Venu Gopal; E. M. Gauger; A. Nazir; B. W. Lovett; A. M. Fox; M. S. Skolnick

doi:10.1103/PhysRevLett.104.017402

Damping of exciton rabi rotations by acoustic phonons in optically excited InGaAs/GaAs quantum dots

A. J. Ramsay, Achanta Venu Gopal, E. M. Gauger, A. Nazir, B. W. Lovett, A. M. Fox, M. S. Skolnick

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Abstract

We report experimental evidence identifying acoustic phonons as the principal source of the excitation-induced-dephasing (EID) responsible for the intensity damping of quantum dot excitonic Rabi rotations. The rate of EID is extracted from temperature dependent Rabi rotation measurements of the ground-state excitonic transition, and is found to be in close quantitative agreement with an acoustic-phonon model. © 2010 The American Physical Society.

Original language	English
Article number	017402
Journal	Physical Review Letters
Volume	104
Issue number	1
DOIs	https://doi.org/10.1103/PhysRevLett.104.017402
Publication status	Published - 8 Jan 2010

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title = "Damping of exciton rabi rotations by acoustic phonons in optically excited InGaAs/GaAs quantum dots",

abstract = "We report experimental evidence identifying acoustic phonons as the principal source of the excitation-induced-dephasing (EID) responsible for the intensity damping of quantum dot excitonic Rabi rotations. The rate of EID is extracted from temperature dependent Rabi rotation measurements of the ground-state excitonic transition, and is found to be in close quantitative agreement with an acoustic-phonon model. {\textcopyright} 2010 The American Physical Society.",

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AU - Ramsay, A. J.

AU - Gopal, Achanta Venu

AU - Gauger, E. M.

AU - Nazir, A.

AU - Lovett, B. W.

AU - Fox, A. M.

AU - Skolnick, M. S.

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PY - 2010/1/8

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N2 - We report experimental evidence identifying acoustic phonons as the principal source of the excitation-induced-dephasing (EID) responsible for the intensity damping of quantum dot excitonic Rabi rotations. The rate of EID is extracted from temperature dependent Rabi rotation measurements of the ground-state excitonic transition, and is found to be in close quantitative agreement with an acoustic-phonon model. © 2010 The American Physical Society.

AB - We report experimental evidence identifying acoustic phonons as the principal source of the excitation-induced-dephasing (EID) responsible for the intensity damping of quantum dot excitonic Rabi rotations. The rate of EID is extracted from temperature dependent Rabi rotation measurements of the ground-state excitonic transition, and is found to be in close quantitative agreement with an acoustic-phonon model. © 2010 The American Physical Society.

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DO - 10.1103/PhysRevLett.104.017402

M3 - Article

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JO - Physical Review Letters

JF - Physical Review Letters

IS - 1

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ER -

Damping of exciton rabi rotations by acoustic phonons in optically excited InGaAs/GaAs quantum dots

Abstract

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