DC characterization of InGaAs/InAlAs/InP based pseudomorphic HEMT (pHEMT)

M. Ahmad; H. T. Butt; T. Tauqeer; M. Missous

doi:10.1109/ASDAM.2012.6418571

DC characterization of InGaAs/InAlAs/InP based pseudomorphic HEMT (pHEMT)

M. Ahmad^*, H. T. Butt, T. Tauqeer, M. Missous

^*Corresponding author for this work

National University of Sciences and Technology Pakistan

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

Abstract

An epitaxial structure comprising depletion mode In_0.7Ga _0.3As/In_0.52Al_0.48As/InP pHEMT has been simulated using SILVACO. The main objective of our work was to incorporate a highly strained pseudomorphic In_0.7Ga_0.3As channel layer and study the effects of variations of supply layer thicknesses, delta doping and gate length. The important DC parameters such as pinch-off voltage, maximum drain current and transconductance are extracted from these simulations which suggest that our device architecture and material exhibits optimized performance. This research also focuses on inverse device modelling from experimental data and proposes calibration changes in epitaxial structure, geometry and doping of simulated pHEMT device in order to match simulated results with the measured results.

Original language	English
Title of host publication	ASDAM 2012 - Conference Proceedings
Subtitle of host publication	The 9th International Conference on Advanced Semiconductor Devices and Microsystems
Pages	187-190
Number of pages	4
DOIs	https://doi.org/10.1109/ASDAM.2012.6418571
Publication status	Published - 1 Dec 2012
Event	9th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2012 - Smolenice, Slovakia Duration: 11 Nov 2012 → 15 Nov 2012

Conference

Conference	9th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2012
Country/Territory	Slovakia
City	Smolenice
Period	11/11/12 → 15/11/12

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10.1109/ASDAM.2012.6418571

Cite this

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title = "DC characterization of InGaAs/InAlAs/InP based pseudomorphic HEMT (pHEMT)",

abstract = "An epitaxial structure comprising depletion mode In0.7Ga 0.3As/In0.52Al0.48As/InP pHEMT has been simulated using SILVACO. The main objective of our work was to incorporate a highly strained pseudomorphic In0.7Ga0.3As channel layer and study the effects of variations of supply layer thicknesses, delta doping and gate length. The important DC parameters such as pinch-off voltage, maximum drain current and transconductance are extracted from these simulations which suggest that our device architecture and material exhibits optimized performance. This research also focuses on inverse device modelling from experimental data and proposes calibration changes in epitaxial structure, geometry and doping of simulated pHEMT device in order to match simulated results with the measured results.",

author = "M. Ahmad and Butt, {H. T.} and T. Tauqeer and M. Missous",

year = "2012",

month = dec,

day = "1",

doi = "10.1109/ASDAM.2012.6418571",

language = "English",

isbn = "9781467311984",

pages = "187--190",

booktitle = "ASDAM 2012 - Conference Proceedings",

note = "9th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2012 ; Conference date: 11-11-2012 Through 15-11-2012",

}

Ahmad, M, Butt, HT, Tauqeer, T & Missous, M 2012, DC characterization of InGaAs/InAlAs/InP based pseudomorphic HEMT (pHEMT). in ASDAM 2012 - Conference Proceedings: The 9th International Conference on Advanced Semiconductor Devices and Microsystems., 6418571, pp. 187-190, 9th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2012, Smolenice, Slovakia, 11/11/12. https://doi.org/10.1109/ASDAM.2012.6418571

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T1 - DC characterization of InGaAs/InAlAs/InP based pseudomorphic HEMT (pHEMT)

AU - Ahmad, M.

AU - Butt, H. T.

AU - Tauqeer, T.

AU - Missous, M.

PY - 2012/12/1

Y1 - 2012/12/1

N2 - An epitaxial structure comprising depletion mode In0.7Ga 0.3As/In0.52Al0.48As/InP pHEMT has been simulated using SILVACO. The main objective of our work was to incorporate a highly strained pseudomorphic In0.7Ga0.3As channel layer and study the effects of variations of supply layer thicknesses, delta doping and gate length. The important DC parameters such as pinch-off voltage, maximum drain current and transconductance are extracted from these simulations which suggest that our device architecture and material exhibits optimized performance. This research also focuses on inverse device modelling from experimental data and proposes calibration changes in epitaxial structure, geometry and doping of simulated pHEMT device in order to match simulated results with the measured results.

AB - An epitaxial structure comprising depletion mode In0.7Ga 0.3As/In0.52Al0.48As/InP pHEMT has been simulated using SILVACO. The main objective of our work was to incorporate a highly strained pseudomorphic In0.7Ga0.3As channel layer and study the effects of variations of supply layer thicknesses, delta doping and gate length. The important DC parameters such as pinch-off voltage, maximum drain current and transconductance are extracted from these simulations which suggest that our device architecture and material exhibits optimized performance. This research also focuses on inverse device modelling from experimental data and proposes calibration changes in epitaxial structure, geometry and doping of simulated pHEMT device in order to match simulated results with the measured results.

UR - http://www.scopus.com/inward/record.url?scp=84874135509&partnerID=8YFLogxK

U2 - 10.1109/ASDAM.2012.6418571

DO - 10.1109/ASDAM.2012.6418571

M3 - Conference contribution

AN - SCOPUS:84874135509

SN - 9781467311984

SP - 187

EP - 190

BT - ASDAM 2012 - Conference Proceedings

T2 - 9th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2012

Y2 - 11 November 2012 through 15 November 2012

ER -

DC characterization of InGaAs/InAlAs/InP based pseudomorphic HEMT (pHEMT)

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