DC isolation and RF dissipation loss of coplanar waveguide on GaAs multi conductive layers bombarded by H+ and Fe+ ions

Zhirun Hu, Van Tuyen Vo, Ali A. Rezazadeh

    Research output: Contribution to journalArticlepeer-review

    Abstract

    This letter explores the dc isolation and radio frequency (RF) dissipation loss of coplanar waveguide (CPW) lines of H+ and Fe+ ion bombarded GaAs multi conductive epitaxial layers. It is demonstrated that although a sheet resistivity as high as 108 Ωsq has been achieved by ion bombardment, showing excellent dc isolation, the RF dissipation loss of gold metallized CPW lines on the bombarded multi conductive epitaxial layers are higher than that on a semi-insulating GaAs substrate, especially at higher frequencies (0.5 dB/cm higher at 50 GHz). This is probably caused by deep level trappings due to the ion bombardment. © 2005 IEEE.
    Original languageEnglish
    Pages (from-to)235-237
    Number of pages2
    JournalIEEE Microwave and Wireless Components Letters
    Volume15
    Issue number4
    DOIs
    Publication statusPublished - Apr 2005

    Keywords

    • DC isolation
    • Ion bombardment
    • Planar doped barrier diodes
    • RF dissipation loss

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