Abstract
This letter explores the dc isolation and radio frequency (RF) dissipation loss of coplanar waveguide (CPW) lines of H+ and Fe+ ion bombarded GaAs multi conductive epitaxial layers. It is demonstrated that although a sheet resistivity as high as 108 Ωsq has been achieved by ion bombardment, showing excellent dc isolation, the RF dissipation loss of gold metallized CPW lines on the bombarded multi conductive epitaxial layers are higher than that on a semi-insulating GaAs substrate, especially at higher frequencies (0.5 dB/cm higher at 50 GHz). This is probably caused by deep level trappings due to the ion bombardment. © 2005 IEEE.
Original language | English |
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Pages (from-to) | 235-237 |
Number of pages | 2 |
Journal | IEEE Microwave and Wireless Components Letters |
Volume | 15 |
Issue number | 4 |
DOIs | |
Publication status | Published - Apr 2005 |
Keywords
- DC isolation
- Ion bombardment
- Planar doped barrier diodes
- RF dissipation loss