Deactivation of B and BF2 profiles after non-melt laser annealing

James A. Sharp; Nicholas E B Cowern; Roger P. Webb; Damiano Giubertoni; Salvotore Gennaro; Massimo Bersani; Majeed A. Foad; Karen J. Kirkby

Deactivation of B and BF2 profiles after non-melt laser annealing

James A. Sharp^*, Nicholas E B Cowern, Roger P. Webb, Damiano Giubertoni, Salvotore Gennaro, Massimo Bersani, Majeed A. Foad, Karen J. Kirkby

^*Corresponding author for this work

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

Abstract

Ultra-shallow B and BF ₂ implants in silicon pre-amorphised with Ge have been activated using a scanning non-melt laser. The implants were activated either by using 1 or 10 laser scans. Isochronal 60s post-laser annealing between 700-1000°C were then undertaken to study the deactivation and reactivation of the B. Both B and BF2 samples were implanted with a dose of 1×10 ¹⁵ B cm ^-2 at an effective energy of 500eV. The presence of F from the BF ₂ implants, which is superimposed over the boron profile increases the sheet resistance of the initial fabricated junction (from 600-700 ohms/sq from B implants only to 750-1100 ohms/sq for BF2 implants). Fluorine also changes the deactivation and reactivation behaviour of the boron during the post-anneals by increasing the amount of deactivation of the boron.

Original language	English
Title of host publication	Materials Research Society Symposium Proceedings
Pages	159-163
Number of pages	5
Volume	912
Publication status	Published - 2006
Event	2006 MRS Spring Meeting - San Francisco, United States Duration: 18 Apr 2006 → 19 Apr 2006

Conference

Conference	2006 MRS Spring Meeting
Country/Territory	United States
City	San Francisco
Period	18/04/06 → 19/04/06

Cite this

@inproceedings{355cd604a5c5495c915731a79f791f0c,

title = "Deactivation of B and BF2 profiles after non-melt laser annealing",

abstract = "Ultra-shallow B and BF 2 implants in silicon pre-amorphised with Ge have been activated using a scanning non-melt laser. The implants were activated either by using 1 or 10 laser scans. Isochronal 60s post-laser annealing between 700-1000°C were then undertaken to study the deactivation and reactivation of the B. Both B and BF2 samples were implanted with a dose of 1×10 15 B cm -2 at an effective energy of 500eV. The presence of F from the BF 2 implants, which is superimposed over the boron profile increases the sheet resistance of the initial fabricated junction (from 600-700 ohms/sq from B implants only to 750-1100 ohms/sq for BF2 implants). Fluorine also changes the deactivation and reactivation behaviour of the boron during the post-anneals by increasing the amount of deactivation of the boron.",

author = "Sharp, {James A.} and Cowern, {Nicholas E B} and Webb, {Roger P.} and Damiano Giubertoni and Salvotore Gennaro and Massimo Bersani and Foad, {Majeed A.} and Kirkby, {Karen J.}",

year = "2006",

language = "English",

isbn = "1558998683",

volume = "912",

pages = "159--163",

booktitle = "Materials Research Society Symposium Proceedings",

note = "2006 MRS Spring Meeting ; Conference date: 18-04-2006 Through 19-04-2006",

}

TY - GEN

T1 - Deactivation of B and BF2 profiles after non-melt laser annealing

AU - Sharp, James A.

AU - Cowern, Nicholas E B

AU - Webb, Roger P.

AU - Giubertoni, Damiano

AU - Gennaro, Salvotore

AU - Bersani, Massimo

AU - Foad, Majeed A.

AU - Kirkby, Karen J.

PY - 2006

Y1 - 2006

N2 - Ultra-shallow B and BF 2 implants in silicon pre-amorphised with Ge have been activated using a scanning non-melt laser. The implants were activated either by using 1 or 10 laser scans. Isochronal 60s post-laser annealing between 700-1000°C were then undertaken to study the deactivation and reactivation of the B. Both B and BF2 samples were implanted with a dose of 1×10 15 B cm -2 at an effective energy of 500eV. The presence of F from the BF 2 implants, which is superimposed over the boron profile increases the sheet resistance of the initial fabricated junction (from 600-700 ohms/sq from B implants only to 750-1100 ohms/sq for BF2 implants). Fluorine also changes the deactivation and reactivation behaviour of the boron during the post-anneals by increasing the amount of deactivation of the boron.

AB - Ultra-shallow B and BF 2 implants in silicon pre-amorphised with Ge have been activated using a scanning non-melt laser. The implants were activated either by using 1 or 10 laser scans. Isochronal 60s post-laser annealing between 700-1000°C were then undertaken to study the deactivation and reactivation of the B. Both B and BF2 samples were implanted with a dose of 1×10 15 B cm -2 at an effective energy of 500eV. The presence of F from the BF 2 implants, which is superimposed over the boron profile increases the sheet resistance of the initial fabricated junction (from 600-700 ohms/sq from B implants only to 750-1100 ohms/sq for BF2 implants). Fluorine also changes the deactivation and reactivation behaviour of the boron during the post-anneals by increasing the amount of deactivation of the boron.

UR - http://www.scopus.com/inward/record.url?scp=33751053864&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:33751053864

SN - 1558998683

SN - 9781558998681

VL - 912

SP - 159

EP - 163

BT - Materials Research Society Symposium Proceedings

T2 - 2006 MRS Spring Meeting

Y2 - 18 April 2006 through 19 April 2006

ER -

Deactivation of B and BF2 profiles after non-melt laser annealing

Abstract

Conference

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