Deep donors in GaSb grown by molecular beam epitaxy

I. Poole, M. E. Lee, I. R. Cleverley, A. R. Peaker, K. E. Singer

Research output: Contribution to journalArticlepeer-review

Abstract

A deep state possessing similar properties to those reported for DX centers in the AlGaAs system has been observed at atmospheric pressure in GaSb moderately doped with sulfur. The first detailed deep level transient spectroscopy study of this material has revealed a large energy barrier to electron capture and a correspondingly small capture cross section for this deep level. The deep level activity of selenium- and tellurium-doped GaSb has also been investigated.

Original languageEnglish
Pages (from-to)1645-1647
Number of pages3
JournalApplied Physics Letters
Volume57
Issue number16
DOIs
Publication statusPublished - 1 Dec 1990

Fingerprint

Dive into the research topics of 'Deep donors in GaSb grown by molecular beam epitaxy'. Together they form a unique fingerprint.

Cite this