Deep-level controlled lifetime and luminescence efficiency in GaP

B. Hamilton; A. R. Peaker; S. Bramwell; W. Harding; D. R. Wight

doi:10.1063/1.88042

Deep-level controlled lifetime and luminescence efficiency in GaP

B. Hamilton^*, A. R. Peaker, S. Bramwell, W. Harding, D. R. Wight

^*Corresponding author for this work

EEE - Academic & Research

Services Electronics Research Laboratories

Research output: Contribution to journal › Article › peer-review

Abstract

The influence of deep levels on the minority-carrier lifetime and relative cathodoluminescent efficiency of undoped GaP has been investigated. Evidence that both these parameters are deep-level controlled is presented. The dominant center was detected by thermal capture and emission of minority carriers optically injected into the depletion layer of Schottky barriers. This center was found to have a depth of E_T-E_V=0.75 eV and a hole capture cross section of approximately 4×10^-14 cm².

Original language	English
Pages (from-to)	702-704
Number of pages	3
Journal	Applied Physics Letters
Volume	26
Issue number	12
DOIs	https://doi.org/10.1063/1.88042
Publication status	Published - 1 Dec 1975

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title = "Deep-level controlled lifetime and luminescence efficiency in GaP",

abstract = "The influence of deep levels on the minority-carrier lifetime and relative cathodoluminescent efficiency of undoped GaP has been investigated. Evidence that both these parameters are deep-level controlled is presented. The dominant center was detected by thermal capture and emission of minority carriers optically injected into the depletion layer of Schottky barriers. This center was found to have a depth of ET-EV=0.75 eV and a hole capture cross section of approximately 4×10-14 cm2.",

author = "B. Hamilton and Peaker, {A. R.} and S. Bramwell and W. Harding and Wight, {D. R.}",

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journal = "Applied Physics Letters",

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T1 - Deep-level controlled lifetime and luminescence efficiency in GaP

AU - Hamilton, B.

AU - Peaker, A. R.

AU - Bramwell, S.

AU - Harding, W.

AU - Wight, D. R.

PY - 1975/12/1

Y1 - 1975/12/1

N2 - The influence of deep levels on the minority-carrier lifetime and relative cathodoluminescent efficiency of undoped GaP has been investigated. Evidence that both these parameters are deep-level controlled is presented. The dominant center was detected by thermal capture and emission of minority carriers optically injected into the depletion layer of Schottky barriers. This center was found to have a depth of ET-EV=0.75 eV and a hole capture cross section of approximately 4×10-14 cm2.

AB - The influence of deep levels on the minority-carrier lifetime and relative cathodoluminescent efficiency of undoped GaP has been investigated. Evidence that both these parameters are deep-level controlled is presented. The dominant center was detected by thermal capture and emission of minority carriers optically injected into the depletion layer of Schottky barriers. This center was found to have a depth of ET-EV=0.75 eV and a hole capture cross section of approximately 4×10-14 cm2.

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U2 - 10.1063/1.88042

DO - 10.1063/1.88042

M3 - Article

AN - SCOPUS:5844426567

SN - 0003-6951

VL - 26

SP - 702

EP - 704

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Deep-level controlled lifetime and luminescence efficiency in GaP

Abstract

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