DEEP LEVEL MEASUREMENTS ON MBE SILICON.

A. Sandhu, B. Hamilton, A. R. Peaker, R. A. Kubiak, W. Y. Leong, E. H.C. Parker

Research output: Contribution to journalConference articlepeer-review

Abstract

Deep level transient spectroscopy (DLTS) has been performed on MBE layers and on structures processed to allow measurement near to the substrate-epilayer interface. It has been found that undoped layers can yield spectra dominated by point defects rather than extended defects. The overall concentration of deep levels is rather low (approximately 10**1**3 cm** minus **3). The deep level species found were not typical of previously reported deep levels in CVD epitaxy or bulk silicon, though one level had activation characteristics which closely resembled the heavier 3d transition metals. The deep levels measured in the surface of the substrate were consistent with surface modification possibly caused by the pre-growth environment.

Original languageEnglish
Pages (from-to)78-85
Number of pages8
JournalProceedings - The Electrochemical Society
Volume85-7
Publication statusPublished - 1985

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