Deep level profile studies in chromium radiotracer diffused MOCVD GaAs

W. K. Ke; B. Hamilton; A. R. Peaker; M. Brozel; B. Tuck; D. R. Wight

doi:10.1016/0038-1101(85)90133-9

Deep level profile studies in chromium radiotracer diffused MOCVD GaAs

W. K. Ke, B. Hamilton, A. R. Peaker, M. Brozel, B. Tuck, D. R. Wight

EEE - Academic & Research

Research output: Contribution to journal › Article › peer-review

Abstract

The methods of radiotracer diffusion profiling and deep level profiling have been combined to investigate the behaviour of chromium atoms diffused into highly n-type GaAs epitaxial layers. Strong electric fields are found to cause distortion of DLTS profiles for the EL1 centre, but good agreement was obtained using an optically pumped method. A hole trap located at 0.34 eV above the valence, and thought to be associated with the 4+ charge state of Cr, matched the atomic Cr concentration to within a factor of two. It was found that for high temperature diffusions ( m ̃1000°C) most of the Cr atoms act as deep acceptor centres.

Original language	English
Pages (from-to)	611-615
Number of pages	5
Journal	Solid State Electronics
Volume	28
Issue number	6
DOIs	https://doi.org/10.1016/0038-1101(85)90133-9
Publication status	Published - Jun 1985

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@article{9868790d917241b7bfbc8538023fe2af,

title = "Deep level profile studies in chromium radiotracer diffused MOCVD GaAs",

abstract = "The methods of radiotracer diffusion profiling and deep level profiling have been combined to investigate the behaviour of chromium atoms diffused into highly n-type GaAs epitaxial layers. Strong electric fields are found to cause distortion of DLTS profiles for the EL1 centre, but good agreement was obtained using an optically pumped method. A hole trap located at 0.34 eV above the valence, and thought to be associated with the 4+ charge state of Cr, matched the atomic Cr concentration to within a factor of two. It was found that for high temperature diffusions ( m{\~ }1000°C) most of the Cr atoms act as deep acceptor centres.",

author = "Ke, {W. K.} and B. Hamilton and Peaker, {A. R.} and M. Brozel and B. Tuck and Wight, {D. R.}",

year = "1985",

month = jun,

doi = "10.1016/0038-1101(85)90133-9",

language = "English",

volume = "28",

pages = "611--615",

journal = "Solid State Electronics",

issn = "0038-1101",

publisher = "Elsevier BV",

number = "6",

}

TY - JOUR

T1 - Deep level profile studies in chromium radiotracer diffused MOCVD GaAs

AU - Ke, W. K.

AU - Hamilton, B.

AU - Peaker, A. R.

AU - Brozel, M.

AU - Tuck, B.

AU - Wight, D. R.

PY - 1985/6

Y1 - 1985/6

N2 - The methods of radiotracer diffusion profiling and deep level profiling have been combined to investigate the behaviour of chromium atoms diffused into highly n-type GaAs epitaxial layers. Strong electric fields are found to cause distortion of DLTS profiles for the EL1 centre, but good agreement was obtained using an optically pumped method. A hole trap located at 0.34 eV above the valence, and thought to be associated with the 4+ charge state of Cr, matched the atomic Cr concentration to within a factor of two. It was found that for high temperature diffusions ( m ̃1000°C) most of the Cr atoms act as deep acceptor centres.

AB - The methods of radiotracer diffusion profiling and deep level profiling have been combined to investigate the behaviour of chromium atoms diffused into highly n-type GaAs epitaxial layers. Strong electric fields are found to cause distortion of DLTS profiles for the EL1 centre, but good agreement was obtained using an optically pumped method. A hole trap located at 0.34 eV above the valence, and thought to be associated with the 4+ charge state of Cr, matched the atomic Cr concentration to within a factor of two. It was found that for high temperature diffusions ( m ̃1000°C) most of the Cr atoms act as deep acceptor centres.

UR - http://www.scopus.com/inward/record.url?scp=0022080322&partnerID=8YFLogxK

U2 - 10.1016/0038-1101(85)90133-9

DO - 10.1016/0038-1101(85)90133-9

M3 - Article

AN - SCOPUS:0022080322

SN - 0038-1101

VL - 28

SP - 611

EP - 615

JO - Solid State Electronics

JF - Solid State Electronics

IS - 6

ER -

Deep level profile studies in chromium radiotracer diffused MOCVD GaAs

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