Deep level profiles at substrate-epitaxial interfaces in gallium phosphide

B. Hamilton, A. R. Peaker

Research output: Contribution to journalArticlepeer-review

Abstract

The spatial distribution of several species of deep level defects have been measured in the substrate-epitaxy interface region for both liquid phase and vapour phase gallium phosphide. It is found that certain deep levels, measured by photo-ionisation, and photo-capture methods, have greatly enhanced concentrations at the interface and in the last few microns of the substrate material. This pile up of defects is particularly severe in the vapour phase epitaxial layers. The deep level profiles have been mapped in detail for substitutional oxygen and for a transition metal associated defect. A significant difference in their behaviour has been observed. For the transition metal defect, additional in-diffusion experiments have been undertaken which confirm that the interfacial region provides preferential sitting conditions which result in a concentration enhancement. This observation is important for thin layer devices where the interfacial regions form part or are close to the active device volume. The measured capture cross-sections suggest that the large concentrations in the interface region would produce high levels of recombination, and may contribute to the large recombination velocities observed at interfaces.

Original languageEnglish
Pages (from-to)1513-1517
Number of pages5
JournalSolid State Electronics
Volume21
Issue number11-12
DOIs
Publication statusPublished - 1 Jan 1978

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