Deep level transient spectroscopy of SnO2-based varistors

Jiwei Fan; Robert Freer

doi:10.1063/1.2710752

Deep level transient spectroscopy of SnO2-based varistors

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Abstract

Deep level transient spectroscopy measurements were performed to investigate the effect of Nb2 O5 and Cr2 O3 on the electronic states of Sn O2 -based varistors. Two electron traps, Ec -0.30 (±0.01) eV and Ec -0.69 (±0.03) eV, were identified in both Sn O2 -CoO- Nb2 O5 and Sn O2 -CoO- Nb2 O5 - Cr2 O3 varistors. These two traps could be associated with the second ionization energy of oxygen vacancies VO or impurities on host lattice site CoSn′ or NbSn. The two trap levels are not associated with chromium doping, since Cr2 O3 doping only changes the donor density and trap densities. © 2007 American Institute of Physics.

Original language	English
Article number	093511
Journal	Applied Physics Letters
Volume	90
Issue number	9
DOIs	https://doi.org/10.1063/1.2710752
Publication status	Published - 2007

Keywords

ZINC-OXIDE VARISTORS
NONOHMIC BEHAVIOR
ADMITTANCE
CERAMICS
BARRIER
VOLTAGE
SYSTEM
OXYGEN

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10.1063/1.2710752

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title = "Deep level transient spectroscopy of SnO2-based varistors",

abstract = "Deep level transient spectroscopy measurements were performed to investigate the effect of Nb2 O5 and Cr2 O3 on the electronic states of Sn O2 -based varistors. Two electron traps, Ec -0.30 (±0.01) eV and Ec -0.69 (±0.03) eV, were identified in both Sn O2 -CoO- Nb2 O5 and Sn O2 -CoO- Nb2 O5 - Cr2 O3 varistors. These two traps could be associated with the second ionization energy of oxygen vacancies VO or impurities on host lattice site CoSn′ or NbSn. The two trap levels are not associated with chromium doping, since Cr2 O3 doping only changes the donor density and trap densities. {\textcopyright} 2007 American Institute of Physics.",

keywords = "ZINC-OXIDE VARISTORS, NONOHMIC BEHAVIOR, ADMITTANCE, CERAMICS, BARRIER, VOLTAGE, SYSTEM, OXYGEN",

author = "Jiwei Fan and Robert Freer",

note = "Fan, Jiwei Freer, Robert 14 AMER INST PHYSICS MELVILLE 141PR",

year = "2007",

doi = "10.1063/1.2710752",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "9",

}

TY - JOUR

T1 - Deep level transient spectroscopy of SnO2-based varistors

AU - Fan, Jiwei

AU - Freer, Robert

N1 - Fan, Jiwei Freer, Robert 14 AMER INST PHYSICS MELVILLE 141PR

PY - 2007

Y1 - 2007

N2 - Deep level transient spectroscopy measurements were performed to investigate the effect of Nb2 O5 and Cr2 O3 on the electronic states of Sn O2 -based varistors. Two electron traps, Ec -0.30 (±0.01) eV and Ec -0.69 (±0.03) eV, were identified in both Sn O2 -CoO- Nb2 O5 and Sn O2 -CoO- Nb2 O5 - Cr2 O3 varistors. These two traps could be associated with the second ionization energy of oxygen vacancies VO or impurities on host lattice site CoSn′ or NbSn. The two trap levels are not associated with chromium doping, since Cr2 O3 doping only changes the donor density and trap densities. © 2007 American Institute of Physics.

AB - Deep level transient spectroscopy measurements were performed to investigate the effect of Nb2 O5 and Cr2 O3 on the electronic states of Sn O2 -based varistors. Two electron traps, Ec -0.30 (±0.01) eV and Ec -0.69 (±0.03) eV, were identified in both Sn O2 -CoO- Nb2 O5 and Sn O2 -CoO- Nb2 O5 - Cr2 O3 varistors. These two traps could be associated with the second ionization energy of oxygen vacancies VO or impurities on host lattice site CoSn′ or NbSn. The two trap levels are not associated with chromium doping, since Cr2 O3 doping only changes the donor density and trap densities. © 2007 American Institute of Physics.

KW - ZINC-OXIDE VARISTORS

KW - NONOHMIC BEHAVIOR

KW - ADMITTANCE

KW - CERAMICS

KW - BARRIER

KW - VOLTAGE

KW - SYSTEM

KW - OXYGEN

U2 - 10.1063/1.2710752

DO - 10.1063/1.2710752

M3 - Article

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

M1 - 093511

ER -

Deep level transient spectroscopy of SnO2-based varistors

Abstract

Keywords

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