Deep States Associated With Stacking Faults In Silicon

G. R. Lahiji; B. Hamilton; A. R. Peaker

doi:10.1049/el:19880912

Deep States Associated With Stacking Faults In Silicon

G. R. Lahiji, B. Hamilton, A. R. Peaker

EEE - Academic & Research

UMIST

Research output: Contribution to journal › Article › peer-review

Abstract

We have studied the electrical behaviour of stacking faults in silicon, and show conclusively that the electron emission properties of the deep states associated with these defects are modified by decoration with gold. The emission properties and concentration of the deep state associated with the decorated defect changes systematically with the amount of gold present.

Original language	English
Pages (from-to)	1340-1342
Number of pages	3
Journal	Electronics Letters
Volume	24
Issue number	21
DOIs	https://doi.org/10.1049/el:19880912
Publication status	Published - 1 Jan 1988

Keywords

Semiconductor devices and materials
Silicon

Access to Document

10.1049/el:19880912

Cite this

@article{38fb210f69904faf94bc25ea120bb8cd,

title = "Deep States Associated With Stacking Faults In Silicon",

abstract = "We have studied the electrical behaviour of stacking faults in silicon, and show conclusively that the electron emission properties of the deep states associated with these defects are modified by decoration with gold. The emission properties and concentration of the deep state associated with the decorated defect changes systematically with the amount of gold present.",

keywords = "Semiconductor devices and materials, Silicon",

author = "Lahiji, {G. R.} and B. Hamilton and Peaker, {A. R.}",

year = "1988",

month = jan,

day = "1",

doi = "10.1049/el:19880912",

language = "English",

volume = "24",

pages = "1340--1342",

journal = " Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley & Sons Ltd",

number = "21",

}

TY - JOUR

T1 - Deep States Associated With Stacking Faults In Silicon

AU - Lahiji, G. R.

AU - Hamilton, B.

AU - Peaker, A. R.

PY - 1988/1/1

Y1 - 1988/1/1

N2 - We have studied the electrical behaviour of stacking faults in silicon, and show conclusively that the electron emission properties of the deep states associated with these defects are modified by decoration with gold. The emission properties and concentration of the deep state associated with the decorated defect changes systematically with the amount of gold present.

AB - We have studied the electrical behaviour of stacking faults in silicon, and show conclusively that the electron emission properties of the deep states associated with these defects are modified by decoration with gold. The emission properties and concentration of the deep state associated with the decorated defect changes systematically with the amount of gold present.

KW - Semiconductor devices and materials

KW - Silicon

UR - http://www.scopus.com/inward/record.url?scp=0024089225&partnerID=8YFLogxK

U2 - 10.1049/el:19880912

DO - 10.1049/el:19880912

M3 - Article

AN - SCOPUS:0024089225

SN - 0013-5194

VL - 24

SP - 1340

EP - 1342

JO - Electronics Letters

JF - Electronics Letters

IS - 21

ER -

Deep States Associated With Stacking Faults In Silicon

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this