Deep States Associated With Stacking Faults In Silicon

G. R. Lahiji, B. Hamilton, A. R. Peaker

Research output: Contribution to journalArticlepeer-review


We have studied the electrical behaviour of stacking faults in silicon, and show conclusively that the electron emission properties of the deep states associated with these defects are modified by decoration with gold. The emission properties and concentration of the deep state associated with the decorated defect changes systematically with the amount of gold present.

Original languageEnglish
Pages (from-to)1340-1342
Number of pages3
Journal Electronics Letters
Issue number21
Publication statusPublished - 1 Jan 1988


  • Semiconductor devices and materials
  • Silicon


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