Deep states in rapid annealed silicon

M. Di Marco, A. R. Peaker, C. Hill, M. Hart, A. E. Glaccum

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Deep state measurements have been made on n and p-type silicon grown by Czochralski and float-zone techniques. Major changes are observed when unimplanted slices are annealed. There are differences between lamp and electron beam annealing and between float-zone and Czochralski material. The deep states created in unimplanted layers are present in low concentrations and are associated with vacancy complexes.

Original languageEnglish
Title of host publicationESSDERC 1987 - 17th European Solid State Device Research Conference
PublisherIEEE Computer Society
Pages561-564
Number of pages4
ISBN (Electronic)0444704779
ISBN (Print)9780444704771
Publication statusPublished - 1987
Event17th European Solid State Device Research Conference, ESSDERC 1987 - Bologna, Italy
Duration: 14 Sept 198717 Sept 1987

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Conference

Conference17th European Solid State Device Research Conference, ESSDERC 1987
Country/TerritoryItaly
CityBologna
Period14/09/8717/09/87

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