Defect formation and thermal stability of H in high dose H implanted ZnO

K S Chan, L Vines, K M Johansen, E V Monkhov, J D Ye, P Parkinson, C Jagadish, B G Svensson, J Wong-Leung

    Research output: Contribution to journalArticlepeer-review

    Abstract

    We studied the structural properties, defect formation, and thermal stability of H in hydrothermally grown ZnO single crystals implanted with H- dose ranging from 2.5×1016 to 1×1017 cm−2. H implantation is found to create deformed layers with a uniaxial strain of 0.5–2.4% along the c-axis in ZnO, for the low and high dose, respectively. About 0.2–0.4% of the original implanted H concentration can still be detected in the samples by secondary ion mass spectrometry after annealing at a temperature up to 800 °C. The thermally stable H is tentatively attributed to H related defect complexes involving the substitutional H that are bound to O vacancies and/or the highly mobile interstitial H that are bound to substitutional Li occupying Zn vacancies as the samples are cooled slowly from high temperature annealing. H implantation to a dose of 1×1017 cm−2 and followed by annealing at 800 °C, is found to result in the formation of vacancy clusters that evolved into faceted voids with diameter varying from 2 to 30 nm. The truncations around the voids form more favorably on the O-terminated surface than on the Zn-terminated surface, suggesting that O is a preferred surface polarity for the internal facets of the voids in the presence of H.
    Original languageEnglish
    Pages (from-to)083111
    JournalJournal of Applied Physics
    Volume114
    DOIs
    Publication statusPublished - 2013

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