Defect-Free Axially Stacked GaAs/GaAsP Nanowire Quantum Dots with Strong Carrier Confinement

Yunyan Zhang; Anton V Velichko; H Aruni Fonseka; Patrick Parkinson; James A Gott; George Davis; Martin Aagesen; Ana M Sanchez; David Mowbray; Huiyun Liu

doi:10.1021/acs.nanolett.1c01461

Defect-Free Axially Stacked GaAs/GaAsP Nanowire Quantum Dots with Strong Carrier Confinement

Yunyan Zhang, Anton V Velichko, H Aruni Fonseka, Patrick Parkinson, James A Gott, George Davis, Martin Aagesen, Ana M Sanchez, David Mowbray, Huiyun Liu

Photon Physics Group

Research output: Contribution to journal › Article › peer-review

Abstract

Axially stacked quantum dots (QDs) in nanowires (NWs) have important applications in nanoscale quantum devices and lasers. However, there is lack of study of defect-free growth and structure optimization using the Au-free growth mode. We report a detailed study of self-catalyzed GaAsP NWs containing defect-free axial GaAs QDs (NWQDs). Sharp interfaces (1.8-3.6 nm) allow closely stack QDs with very similar structural properties. High structural quality is maintained when up to 50 GaAs QDs are placed in a single NW. The QDs maintain an emission line width of <10 meV at 140 K (comparable to the best III-V QDs, including nitrides) after having been stored in an ambient atmosphere for over 6 months and exhibit deep carrier confinement (∼90 meV) and the largest reported exciton-biexciton splitting (∼11 meV) for non-nitride III-V NWQDs. Our study provides a solid foundation to build high-performance axially stacked NWQD devices that are compatible with CMOS technologies.

Original language	English
Pages (from-to)	5722-5729
Number of pages	8
Journal	Nano Letters
Volume	21
Issue number	13
Early online date	28 Jun 2021
DOIs	https://doi.org/10.1021/acs.nanolett.1c01461
Publication status	Published - 14 Jul 2021

Keywords

axially stacked quantum dots
carrier confinement
defect-free crystal
exciton-biexciton splitting
long-Term stability
nanowire

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10.1021/acs.nanolett.1c01461

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.1c01461

Cite this

@article{42408b663c26427599aee91dfcbe8ac7,

title = "Defect-Free Axially Stacked GaAs/GaAsP Nanowire Quantum Dots with Strong Carrier Confinement",

abstract = "Axially stacked quantum dots (QDs) in nanowires (NWs) have important applications in nanoscale quantum devices and lasers. However, there is lack of study of defect-free growth and structure optimization using the Au-free growth mode. We report a detailed study of self-catalyzed GaAsP NWs containing defect-free axial GaAs QDs (NWQDs). Sharp interfaces (1.8-3.6 nm) allow closely stack QDs with very similar structural properties. High structural quality is maintained when up to 50 GaAs QDs are placed in a single NW. The QDs maintain an emission line width of <10 meV at 140 K (comparable to the best III-V QDs, including nitrides) after having been stored in an ambient atmosphere for over 6 months and exhibit deep carrier confinement (∼90 meV) and the largest reported exciton-biexciton splitting (∼11 meV) for non-nitride III-V NWQDs. Our study provides a solid foundation to build high-performance axially stacked NWQD devices that are compatible with CMOS technologies.",

keywords = "axially stacked quantum dots, carrier confinement, defect-free crystal, exciton-biexciton splitting, long-Term stability, nanowire",

author = "Yunyan Zhang and Velichko, {Anton V} and Fonseka, {H Aruni} and Patrick Parkinson and Gott, {James A} and George Davis and Martin Aagesen and Sanchez, {Ana M} and David Mowbray and Huiyun Liu",

note = "Funding Information: The authors acknowledge the support of Leverhulme Trust, EPSRC (grant nos. EP/P000916/1, EP/P000886/1, and EP/P006973/1), and the EPSRC National Epitaxy Facility. This project has also received funding from the European Union{\textquoteright}s Horizon 2020 research and innovation programme under Marie Sklodowska-Curie grant agreement no. 721394. P.P. acknowledges funding from a UKRI Future Leaders Fellowship (MR/T021519/1). Publisher Copyright: {\textcopyright} 2021 American Chemical Society. All rights reserved.",

year = "2021",

month = jul,

day = "14",

doi = "10.1021/acs.nanolett.1c01461",

language = "English",

volume = "21",

pages = "5722--5729",

journal = "Nano Letters",

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publisher = "American Chemical Society",

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T1 - Defect-Free Axially Stacked GaAs/GaAsP Nanowire Quantum Dots with Strong Carrier Confinement

AU - Zhang, Yunyan

AU - Velichko, Anton V

AU - Fonseka, H Aruni

AU - Parkinson, Patrick

AU - Gott, James A

AU - Davis, George

AU - Aagesen, Martin

AU - Sanchez, Ana M

AU - Mowbray, David

AU - Liu, Huiyun

N1 - Funding Information: The authors acknowledge the support of Leverhulme Trust, EPSRC (grant nos. EP/P000916/1, EP/P000886/1, and EP/P006973/1), and the EPSRC National Epitaxy Facility. This project has also received funding from the European Union’s Horizon 2020 research and innovation programme under Marie Sklodowska-Curie grant agreement no. 721394. P.P. acknowledges funding from a UKRI Future Leaders Fellowship (MR/T021519/1). Publisher Copyright: © 2021 American Chemical Society. All rights reserved.

PY - 2021/7/14

Y1 - 2021/7/14

N2 - Axially stacked quantum dots (QDs) in nanowires (NWs) have important applications in nanoscale quantum devices and lasers. However, there is lack of study of defect-free growth and structure optimization using the Au-free growth mode. We report a detailed study of self-catalyzed GaAsP NWs containing defect-free axial GaAs QDs (NWQDs). Sharp interfaces (1.8-3.6 nm) allow closely stack QDs with very similar structural properties. High structural quality is maintained when up to 50 GaAs QDs are placed in a single NW. The QDs maintain an emission line width of <10 meV at 140 K (comparable to the best III-V QDs, including nitrides) after having been stored in an ambient atmosphere for over 6 months and exhibit deep carrier confinement (∼90 meV) and the largest reported exciton-biexciton splitting (∼11 meV) for non-nitride III-V NWQDs. Our study provides a solid foundation to build high-performance axially stacked NWQD devices that are compatible with CMOS technologies.

AB - Axially stacked quantum dots (QDs) in nanowires (NWs) have important applications in nanoscale quantum devices and lasers. However, there is lack of study of defect-free growth and structure optimization using the Au-free growth mode. We report a detailed study of self-catalyzed GaAsP NWs containing defect-free axial GaAs QDs (NWQDs). Sharp interfaces (1.8-3.6 nm) allow closely stack QDs with very similar structural properties. High structural quality is maintained when up to 50 GaAs QDs are placed in a single NW. The QDs maintain an emission line width of <10 meV at 140 K (comparable to the best III-V QDs, including nitrides) after having been stored in an ambient atmosphere for over 6 months and exhibit deep carrier confinement (∼90 meV) and the largest reported exciton-biexciton splitting (∼11 meV) for non-nitride III-V NWQDs. Our study provides a solid foundation to build high-performance axially stacked NWQD devices that are compatible with CMOS technologies.

KW - axially stacked quantum dots

KW - carrier confinement

KW - defect-free crystal

KW - exciton-biexciton splitting

KW - long-Term stability

KW - nanowire

U2 - 10.1021/acs.nanolett.1c01461

DO - 10.1021/acs.nanolett.1c01461

M3 - Article

C2 - 34181433

SN - 1530-6984

VL - 21

SP - 5722

EP - 5729

JO - Nano Letters

JF - Nano Letters

IS - 13

ER -

Defect-Free Axially Stacked GaAs/GaAsP Nanowire Quantum Dots with Strong Carrier Confinement

Abstract

Keywords

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