Defect-Free Axially Stacked GaAs/GaAsP Nanowire Quantum Dots with Strong Carrier Confinement

Yunyan Zhang, Anton V Velichko, H Aruni Fonseka, Patrick Parkinson, James A Gott, George Davis, Martin Aagesen, Ana M Sanchez, David Mowbray, Huiyun Liu

Research output: Contribution to journalArticlepeer-review


Axially stacked quantum dots (QDs) in nanowires (NWs) have important applications in nanoscale quantum devices and lasers. However, there is lack of study of defect-free growth and structure optimization using the Au-free growth mode. We report a detailed study of self-catalyzed GaAsP NWs containing defect-free axial GaAs QDs (NWQDs). Sharp interfaces (1.8-3.6 nm) allow closely stack QDs with very similar structural properties. High structural quality is maintained when up to 50 GaAs QDs are placed in a single NW. The QDs maintain an emission line width of <10 meV at 140 K (comparable to the best III-V QDs, including nitrides) after having been stored in an ambient atmosphere for over 6 months and exhibit deep carrier confinement (∼90 meV) and the largest reported exciton-biexciton splitting (∼11 meV) for non-nitride III-V NWQDs. Our study provides a solid foundation to build high-performance axially stacked NWQD devices that are compatible with CMOS technologies.

Original languageEnglish
Pages (from-to)5722-5729
Number of pages8
JournalNano Letters
Issue number13
Early online date28 Jun 2021
Publication statusPublished - 14 Jul 2021


  • axially stacked quantum dots
  • carrier confinement
  • defect-free crystal
  • exciton-biexciton splitting
  • long-Term stability
  • nanowire


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