Defect-impurity complexes with high thermal stability in epi-Si n+-p diodes irradiated with MeV electrons

F. P. Korshunov; S. B. Lastovskii; V. P. Markevich; L. I. Murin; Yu V. Bogatyrev; A. R. Peaker

doi:10.1016/j.vacuum.2009.01.044

Defect-impurity complexes with high thermal stability in epi-Si n+-p diodes irradiated with MeV electrons

F. P. Korshunov, S. B. Lastovskii, V. P. Markevich, L. I. Murin, Yu V. Bogatyrev, A. R. Peaker

Research output: Contribution to journal › Article › peer-review

Abstract

Defect-impurity complexes with high thermal stability which were generated after high temperature annealing of silicon n+-p diodes irradiated with 4 MeV electrons at 300 K have been studied by means of deep level transient spectroscopy (DLTS). Such defects are of interest because of their possible application in controlling the carrier lifetime in silicon power devices. The parameters of four deep level traps have been determined and compared with the results of photoluminescence studies on thermal stability of electron-irradiation-induced defects. A donor like trap with an energy level at Ev + 0.39 eV was assigned to a complex incorporating an interstitial carbon atom and two oxygen atoms (CiO2i), which gives rise to the P-line (hν = 0.767 eV) in photoluminescence spectra. © 2009 Elsevier Ltd. All rights reserved.

Original language	English
Pages (from-to)	S131-S133
Journal	Vacuum
Volume	83
Issue number	1
DOIs	https://doi.org/10.1016/j.vacuum.2009.01.044
Publication status	Published - 1 May 2009

Keywords

Carrier lifetime control
Deep levels
Electron irradiation
Epi-silicon
n+-p-structures
Radiation-induced defects

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.vacuum.2009.01.044

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title = "Defect-impurity complexes with high thermal stability in epi-Si n+-p diodes irradiated with MeV electrons",

abstract = "Defect-impurity complexes with high thermal stability which were generated after high temperature annealing of silicon n+-p diodes irradiated with 4 MeV electrons at 300 K have been studied by means of deep level transient spectroscopy (DLTS). Such defects are of interest because of their possible application in controlling the carrier lifetime in silicon power devices. The parameters of four deep level traps have been determined and compared with the results of photoluminescence studies on thermal stability of electron-irradiation-induced defects. A donor like trap with an energy level at Ev + 0.39 eV was assigned to a complex incorporating an interstitial carbon atom and two oxygen atoms (CiO2i), which gives rise to the P-line (hν = 0.767 eV) in photoluminescence spectra. {\textcopyright} 2009 Elsevier Ltd. All rights reserved.",

keywords = "Carrier lifetime control, Deep levels, Electron irradiation, Epi-silicon, n+-p-structures, Radiation-induced defects",

author = "Korshunov, {F. P.} and Lastovskii, {S. B.} and Markevich, {V. P.} and Murin, {L. I.} and Bogatyrev, {Yu V.} and Peaker, {A. R.}",

year = "2009",

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doi = "10.1016/j.vacuum.2009.01.044",

language = "English",

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TY - JOUR

T1 - Defect-impurity complexes with high thermal stability in epi-Si n+-p diodes irradiated with MeV electrons

AU - Korshunov, F. P.

AU - Lastovskii, S. B.

AU - Markevich, V. P.

AU - Murin, L. I.

AU - Bogatyrev, Yu V.

AU - Peaker, A. R.

PY - 2009/5/1

Y1 - 2009/5/1

N2 - Defect-impurity complexes with high thermal stability which were generated after high temperature annealing of silicon n+-p diodes irradiated with 4 MeV electrons at 300 K have been studied by means of deep level transient spectroscopy (DLTS). Such defects are of interest because of their possible application in controlling the carrier lifetime in silicon power devices. The parameters of four deep level traps have been determined and compared with the results of photoluminescence studies on thermal stability of electron-irradiation-induced defects. A donor like trap with an energy level at Ev + 0.39 eV was assigned to a complex incorporating an interstitial carbon atom and two oxygen atoms (CiO2i), which gives rise to the P-line (hν = 0.767 eV) in photoluminescence spectra. © 2009 Elsevier Ltd. All rights reserved.

AB - Defect-impurity complexes with high thermal stability which were generated after high temperature annealing of silicon n+-p diodes irradiated with 4 MeV electrons at 300 K have been studied by means of deep level transient spectroscopy (DLTS). Such defects are of interest because of their possible application in controlling the carrier lifetime in silicon power devices. The parameters of four deep level traps have been determined and compared with the results of photoluminescence studies on thermal stability of electron-irradiation-induced defects. A donor like trap with an energy level at Ev + 0.39 eV was assigned to a complex incorporating an interstitial carbon atom and two oxygen atoms (CiO2i), which gives rise to the P-line (hν = 0.767 eV) in photoluminescence spectra. © 2009 Elsevier Ltd. All rights reserved.

KW - Carrier lifetime control

KW - Deep levels

KW - Electron irradiation

KW - Epi-silicon

KW - n+-p-structures

KW - Radiation-induced defects

U2 - 10.1016/j.vacuum.2009.01.044

DO - 10.1016/j.vacuum.2009.01.044

M3 - Article

VL - 83

SP - S131-S133

JO - Vacuum

JF - Vacuum

IS - 1

ER -

Defect-impurity complexes with high thermal stability in epi-Si n+-p diodes irradiated with MeV electrons

Abstract

Keywords

UN SDGs

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