@inproceedings{8902f18184b5434993ce420d134f45cd,
title = "Defect-impurity interactions in irradiated tin-doped Cz-Si crystals",
abstract = "Results of a combined infrared absorption (IR) and deep-level transient spectroscopy (DLTS) study of defects induced by irradiation with fast electrons in Sn-doped Czochralski-grown Si crystals are reported. Tin atoms were found to interact effectively with vacancy as well as with interstitial-type radiation-induced defects. Manifestations of stable tin-vacancy and tin-interstitial carbon atom complexes were observed in DLTS and IR absorption spectra. Defect transformations upon heat-treatments of the irradiated samples were studied. Tin atoms were found to be effective traps for mobile vacancy-oxygen (V-O) complexes. A local vibrational mode of a Sn-V-O complex has been identified.",
author = "Khirunenko, {L. I.} and Kobzar, {O. A.} and Pomozov, {Yu V.} and Sosnin, {M. G.} and Tripachko, {N. A.} and Markevich, {V. P.} and Murin, {L. I.} and Peaker, {A. R.}",
year = "2003",
month = jan,
day = "1",
doi = "10.1002/pssc.200306195",
language = "English",
isbn = "352740435X",
series = "Physica Status Solidi Conferences",
publisher = "John Wiley & Sons Ltd",
number = "2",
pages = "694--697",
booktitle = "Physica Status Solidi Conferences",
address = "United Kingdom",
edition = "2",
note = "Proceedings 10th International Conference on Shallow Level Centers in Semiconductors (SLCS-10) ; Conference date: 24-07-2002 Through 27-07-2002",
}