Defect reduction in semi-polar (11-22) gallium nitride grown using epitaxial lateral overgrowth

Tongtong Zhu; Danny Sutherland; Tom J. Badcock; Rui Hao; Michelle A. Moram; Philip Dawson; Menno J. Kappers; Rachel A. Oliver

Defect reduction in semi-polar (11-22) gallium nitride grown using epitaxial lateral overgrowth

Tongtong Zhu, Danny Sutherland, Tom J. Badcock, Rui Hao, Michelle A. Moram, Philip Dawson, Menno J. Kappers, Rachel A. Oliver

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	08JB01
Journal	Japanese Journal of Applied Physics
Volume	52
Publication status	Published - 2013

Cite this

@article{a56cab1e01314f049e6ab06f5b931209,

title = "Defect reduction in semi-polar (11-22) gallium nitride grown using epitaxial lateral overgrowth",

author = "Tongtong Zhu and Danny Sutherland and Badcock, {Tom J.} and Rui Hao and Moram, {Michelle A.} and Philip Dawson and Kappers, {Menno J.} and Oliver, {Rachel A.}",

year = "2013",

language = "English",

volume = "52",

pages = "08JB01",

journal = "Japanese Journal of Applied Physics",

issn = "1347-4065",

publisher = "Institute of Physics Publishing Ltd",

}

TY - JOUR

T1 - Defect reduction in semi-polar (11-22) gallium nitride grown using epitaxial lateral overgrowth

AU - Zhu, Tongtong

AU - Sutherland, Danny

AU - Badcock, Tom J.

AU - Hao, Rui

AU - Moram, Michelle A.

AU - Dawson, Philip

AU - Kappers, Menno J.

AU - Oliver, Rachel A.

PY - 2013

Y1 - 2013

M3 - Article

SN - 1347-4065

VL - 52

SP - 08JB01

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

ER -