Design and analysis of compact MMIC switches utilising GaAs pHEMTs in 3D multilayer technology

Norshakila Haris, Peter B.K. Kyabaggu, Mohammad A. Alim, Ali A. Rezazadeh

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    Abstract

    In this paper, we demonstrate for the first time the implementation of three-dimensional multilayer technology on GaAs-based pseudomorphic high electron mobility transistor (pHEMT) switches. Two types of pHEMT switches are considered, namely single-pole single-throw (SPST) and single-pole double-throw (SPDT). The design and analysis of the devices are demonstrated first through a simulation of the industry-recognised standard model, TriQuint's Own Model - Level 3, developed by TriQuint Semiconductor, Inc. From the simulation analysis, three optimised SPST and SPDT pHEMT switches which can address applications ranging from L to X bands, are fabricated and tested. The performance of the pHEMT switches using multilayer technology are comparable to those of the current state-of-the-art pHEMT switches, while simultaneously offering compact circuits with the advantages of integration with other MMIC components.

    Original languageEnglish
    Article number055014
    JournalSemiconductor Science and Technology
    Volume32
    Issue number5
    Early online date21 Mar 2017
    DOIs
    Publication statusPublished - 25 Apr 2017

    Keywords

    • GaAs
    • MMIC
    • pHEMT
    • SPDT
    • SPST
    • switch

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