Design and fabrication of low power GaAs/AlAs resonant tunneling diodes

Mohamad Adzhar Md Zawawi; Mohamed Missous

doi:10.1109/ISNE.2016.7543315

Design and fabrication of low power GaAs/AlAs resonant tunneling diodes

Mohamad Adzhar Md Zawawi, Mohamed Missous

Universiti Sains Malaysia

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A very low peak voltage GaAs/AlAs resonant tunnelling diode (RTD) grown by molecular beam epitaxy (MBE) has been studied in detail. Excellent growth control with atomic-layer precision resulted in a peak voltage of merely 0.28 V (0.53 V) in forward (reverse) direction. The peak current density in forward bias is around 15.4 kA/cm²(± 7%). As for reverse bias, the peak current density is around 22.8 kA/cm²(± 4%) which implies excellent scalability. In this work, we have successfully demonstrated the design and fabrication of a GaAs/AlAs RTD by using a conventional optical lithography and chemical wet-etching with very low peak voltage suitable for application in low dc input power RTD-based oscillators.

Original language	English
Title of host publication	2016 5th International Symposium on Next-Generation Electronics, ISNE 2016
Publisher	IEEE
ISBN (Electronic)	9781509024391
DOIs	https://doi.org/10.1109/ISNE.2016.7543315
Publication status	Published - 12 Aug 2016
Event	5th International Symposium on Next-Generation Electronics, ISNE 2016 - Hsinchu, Taiwan Duration: 4 May 2016 → 6 May 2016

Conference

Conference	5th International Symposium on Next-Generation Electronics, ISNE 2016
Country/Territory	Taiwan
City	Hsinchu
Period	4/05/16 → 6/05/16

Keywords

AlAs
GaAs
III-V compound semiconductor
oscillator
resonant tunneling diode

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10.1109/ISNE.2016.7543315

Cite this

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title = "Design and fabrication of low power GaAs/AlAs resonant tunneling diodes",

abstract = "A very low peak voltage GaAs/AlAs resonant tunnelling diode (RTD) grown by molecular beam epitaxy (MBE) has been studied in detail. Excellent growth control with atomic-layer precision resulted in a peak voltage of merely 0.28 V (0.53 V) in forward (reverse) direction. The peak current density in forward bias is around 15.4 kA/cm2(± 7%). As for reverse bias, the peak current density is around 22.8 kA/cm2(± 4%) which implies excellent scalability. In this work, we have successfully demonstrated the design and fabrication of a GaAs/AlAs RTD by using a conventional optical lithography and chemical wet-etching with very low peak voltage suitable for application in low dc input power RTD-based oscillators.",

keywords = "AlAs, GaAs, III-V compound semiconductor, oscillator, resonant tunneling diode",

author = "Zawawi, {Mohamad Adzhar Md} and Mohamed Missous",

year = "2016",

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day = "12",

doi = "10.1109/ISNE.2016.7543315",

language = "English",

booktitle = "2016 5th International Symposium on Next-Generation Electronics, ISNE 2016",

publisher = "IEEE",

address = "United States",

note = "5th International Symposium on Next-Generation Electronics, ISNE 2016 ; Conference date: 04-05-2016 Through 06-05-2016",

}

TY - GEN

T1 - Design and fabrication of low power GaAs/AlAs resonant tunneling diodes

AU - Zawawi, Mohamad Adzhar Md

AU - Missous, Mohamed

PY - 2016/8/12

Y1 - 2016/8/12

N2 - A very low peak voltage GaAs/AlAs resonant tunnelling diode (RTD) grown by molecular beam epitaxy (MBE) has been studied in detail. Excellent growth control with atomic-layer precision resulted in a peak voltage of merely 0.28 V (0.53 V) in forward (reverse) direction. The peak current density in forward bias is around 15.4 kA/cm2(± 7%). As for reverse bias, the peak current density is around 22.8 kA/cm2(± 4%) which implies excellent scalability. In this work, we have successfully demonstrated the design and fabrication of a GaAs/AlAs RTD by using a conventional optical lithography and chemical wet-etching with very low peak voltage suitable for application in low dc input power RTD-based oscillators.

AB - A very low peak voltage GaAs/AlAs resonant tunnelling diode (RTD) grown by molecular beam epitaxy (MBE) has been studied in detail. Excellent growth control with atomic-layer precision resulted in a peak voltage of merely 0.28 V (0.53 V) in forward (reverse) direction. The peak current density in forward bias is around 15.4 kA/cm2(± 7%). As for reverse bias, the peak current density is around 22.8 kA/cm2(± 4%) which implies excellent scalability. In this work, we have successfully demonstrated the design and fabrication of a GaAs/AlAs RTD by using a conventional optical lithography and chemical wet-etching with very low peak voltage suitable for application in low dc input power RTD-based oscillators.

KW - AlAs

KW - GaAs

KW - III-V compound semiconductor

KW - oscillator

KW - resonant tunneling diode

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DO - 10.1109/ISNE.2016.7543315

M3 - Conference contribution

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BT - 2016 5th International Symposium on Next-Generation Electronics, ISNE 2016

PB - IEEE

T2 - 5th International Symposium on Next-Generation Electronics, ISNE 2016

Y2 - 4 May 2016 through 6 May 2016

ER -

Design and fabrication of low power GaAs/AlAs resonant tunneling diodes

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Keywords

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