Design and fabrication of low power GaAs/AlAs resonant tunneling diodes

Mohamad Adzhar Md Zawawi; Mohamed Missous

doi:10.1016/j.sse.2017.09.004

Design and fabrication of low power GaAs/AlAs resonant tunneling diodes

Mohamad Adzhar Md Zawawi, Mohamed Missous

Department of Electrical & Electronic Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A very low peak voltage GaAs/AlAs resonant tunneling diode (RTD) grown by molecular beam epitaxy (MBE) has been studied in detail. Excellent growth control with atomic-layer precision resulted in a peak voltage of merely 0.28 V (0.53 V) in forward (reverse) direction. The peak current density in forward bias is around 15.4 kA/cm² with variation of within 7%. As for reverse bias, the peak current density is around 22.8 kA/cm² with 4% variation which implies excellent scalability. In this work, we have successfully demonstrated the fabrication of a GaAs/AlAs RTD by using a conventional optical lithography and chemical wet-etching with very low peak voltage suitable for application in low dc input power RTD-based sub-millimetre wave oscillators.

Original language	English
Pages (from-to)	30-34
Number of pages	5
Journal	Solid-state electronics
Volume	138
Early online date	18 Sept 2017
DOIs	https://doi.org/10.1016/j.sse.2017.09.004
Publication status	Published - 1 Dec 2017

Keywords

AlAs
GaAs
III-V compound semiconductor
Oscillator
Resonant tunneling diode

Access to Document

10.1016/j.sse.2017.09.004

Cite this

@article{b8030d98bc8d419f80fdb47394a84f0c,

title = "Design and fabrication of low power GaAs/AlAs resonant tunneling diodes",

abstract = "A very low peak voltage GaAs/AlAs resonant tunneling diode (RTD) grown by molecular beam epitaxy (MBE) has been studied in detail. Excellent growth control with atomic-layer precision resulted in a peak voltage of merely 0.28 V (0.53 V) in forward (reverse) direction. The peak current density in forward bias is around 15.4 kA/cm2 with variation of within 7%. As for reverse bias, the peak current density is around 22.8 kA/cm2 with 4% variation which implies excellent scalability. In this work, we have successfully demonstrated the fabrication of a GaAs/AlAs RTD by using a conventional optical lithography and chemical wet-etching with very low peak voltage suitable for application in low dc input power RTD-based sub-millimetre wave oscillators.",

keywords = "AlAs, GaAs, III-V compound semiconductor, Oscillator, Resonant tunneling diode",

author = "{Md Zawawi}, {Mohamad Adzhar} and Mohamed Missous",

year = "2017",

month = dec,

day = "1",

doi = "10.1016/j.sse.2017.09.004",

language = "English",

volume = "138",

pages = "30--34",

journal = "Solid-state electronics",

issn = "0038-1101",

publisher = "Elsevier BV",

}

TY - JOUR

T1 - Design and fabrication of low power GaAs/AlAs resonant tunneling diodes

AU - Md Zawawi, Mohamad Adzhar

AU - Missous, Mohamed

PY - 2017/12/1

Y1 - 2017/12/1

N2 - A very low peak voltage GaAs/AlAs resonant tunneling diode (RTD) grown by molecular beam epitaxy (MBE) has been studied in detail. Excellent growth control with atomic-layer precision resulted in a peak voltage of merely 0.28 V (0.53 V) in forward (reverse) direction. The peak current density in forward bias is around 15.4 kA/cm2 with variation of within 7%. As for reverse bias, the peak current density is around 22.8 kA/cm2 with 4% variation which implies excellent scalability. In this work, we have successfully demonstrated the fabrication of a GaAs/AlAs RTD by using a conventional optical lithography and chemical wet-etching with very low peak voltage suitable for application in low dc input power RTD-based sub-millimetre wave oscillators.

AB - A very low peak voltage GaAs/AlAs resonant tunneling diode (RTD) grown by molecular beam epitaxy (MBE) has been studied in detail. Excellent growth control with atomic-layer precision resulted in a peak voltage of merely 0.28 V (0.53 V) in forward (reverse) direction. The peak current density in forward bias is around 15.4 kA/cm2 with variation of within 7%. As for reverse bias, the peak current density is around 22.8 kA/cm2 with 4% variation which implies excellent scalability. In this work, we have successfully demonstrated the fabrication of a GaAs/AlAs RTD by using a conventional optical lithography and chemical wet-etching with very low peak voltage suitable for application in low dc input power RTD-based sub-millimetre wave oscillators.

KW - AlAs

KW - GaAs

KW - III-V compound semiconductor

KW - Oscillator

KW - Resonant tunneling diode

U2 - 10.1016/j.sse.2017.09.004

DO - 10.1016/j.sse.2017.09.004

M3 - Article

AN - SCOPUS:85029674512

SN - 0038-1101

VL - 138

SP - 30

EP - 34

JO - Solid-state electronics

JF - Solid-state electronics

ER -

Design and fabrication of low power GaAs/AlAs resonant tunneling diodes

Abstract

Keywords

Access to Document

Fingerprint

Cite this