Design and implementation of the next generation electron beam resists for the production of EUVL photomasks

Scott M. Lewis, Guy A. DeRose, Hayden R. Alty, Matthew S. Hunt, Jarvis Li, Alex Werthiem, Trevor Fowler, Sang Kook Lee, Christopher A. Muryn, Grigore A. Timco, Axel Scherer, Stephen G. Yeates, Richard E.P. Winpenny

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A new class of resist materials has been developed that is based on a family of heterometallic rings. The work is founded on a Monte Carlo simulation that utilizes a secondary and Auger electron generation model to design resist materials for high resolution electron beam lithography. The resist reduces the scattering of incident electrons to obtain line structures that have a width of 15 nm on a 40 nm pitch. This comes at the expense of lowering the sensitivity of the resist, which results in the need for large exposure doses. Low sensitivity can be dramatically improved by incorporating appropriate functional alkene groups around the metal-organic core, for example by replacing the pivalate component with a methacrylate molecule. This increases the resist sensitivity by a factor of 22.6 and demonstrates strong agreement between the Monte Carlo simulation and the experimental results. After the exposure and development processes, what remains of the resist material is a metal-oxide that is extremely resistant to silicon dry etch conditions; the etch selectivity has been measured to be 61:1.

Original languageEnglish
Title of host publicationPhotomask Technology 2018
EditorsEmily E. Gallagher, Jed H. Rankin
PublisherSPIE
ISBN (Electronic)9781510622159
DOIs
Publication statusPublished - 2018
Event2018 SPIE Photomask Technology - Monterey, United States
Duration: 17 Sept 201819 Sept 2018

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume10810
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

Conference2018 SPIE Photomask Technology
Country/TerritoryUnited States
CityMonterey
Period17/09/1819/09/18

Keywords

  • 3D Secondary and Auger electron Monte Carlo Simulation
  • electron beam lithography
  • Metal Organic electron beam resist

Research Beacons, Institutes and Platforms

  • Photon Science Institute
  • Dalton Nuclear Institute

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