@inproceedings{5bc24f9c362d486a8f3ec9e2ccb38d33,
title = "Design and implementation of the next generation electron beam resists for the production of EUVL photomasks",
abstract = "A new class of resist materials has been developed that is based on a family of heterometallic rings. The work is founded on a Monte Carlo simulation that utilizes a secondary and Auger electron generation model to design resist materials for high resolution electron beam lithography. The resist reduces the scattering of incident electrons to obtain line structures that have a width of 15 nm on a 40 nm pitch. This comes at the expense of lowering the sensitivity of the resist, which results in the need for large exposure doses. Low sensitivity can be dramatically improved by incorporating appropriate functional alkene groups around the metal-organic core, for example by replacing the pivalate component with a methacrylate molecule. This increases the resist sensitivity by a factor of 22.6 and demonstrates strong agreement between the Monte Carlo simulation and the experimental results. After the exposure and development processes, what remains of the resist material is a metal-oxide that is extremely resistant to silicon dry etch conditions; the etch selectivity has been measured to be 61:1.",
keywords = "3D Secondary and Auger electron Monte Carlo Simulation, electron beam lithography, Metal Organic electron beam resist",
author = "Lewis, {Scott M.} and DeRose, {Guy A.} and Alty, {Hayden R.} and Hunt, {Matthew S.} and Jarvis Li and Alex Werthiem and Trevor Fowler and Lee, {Sang Kook} and Muryn, {Christopher A.} and Timco, {Grigore A.} and Axel Scherer and Yeates, {Stephen G.} and Winpenny, {Richard E.P.}",
note = "Funding Information: We acknowledge the EPSRC(UK) for funding (grant EP/R023158/1). The University of Manchester also supported this work. The authors gratefully acknowledge critical support and infrastructure provided for this work by the Kavli Nanoscience Institute at Caltech. Publisher Copyright: {\textcopyright} 2018 SPIE. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.; 2018 SPIE Photomask Technology ; Conference date: 17-09-2018 Through 19-09-2018",
year = "2018",
doi = "10.1117/12.2501808",
language = "English",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Gallagher, {Emily E.} and Rankin, {Jed H.}",
booktitle = "Photomask Technology 2018",
address = "United States",
}