Design and quantification of a nanoscale field effect transistor: Distributed response analysis for investigating conductive behaviour

Marc In Het Panhuis, Jonathan N. Coleman, Paul A. Popelier, Brian Foley, Robert W. Munn, Werner J. Blau

    Research output: Chapter in Book/Report/Conference proceedingChapter

    Abstract

    A new design for a field effect transistor able to push back the physical limits of Moore's Law is described. An ab initio computational approach is presented that can be further developed to characterize the ON/OFF states of such a device. Distributed response analysis (M. in het Panhuis, P.L.A. Popelier, R.W. Munn, J.G. Ágyán (2001), J. Chem. Phys. 114, 7951 - 7961) is employed to investigate conductive behavior. The method demonstrates that in analogy to conduction an electron can move across a possible conjugated molecular switching element (para-nitroaniline) in an electric field.
    Original languageEnglish
    Title of host publicationMaterials Research Society Symposium - Proceedings|Mater Res Soc Symp Proc
    Pages365-370
    Number of pages5
    Volume706
    Publication statusPublished - 2002
    EventMaking Functional Materials with Nanotubes - Boston, MA
    Duration: 1 Jul 2002 → …
    http://<Go to ISI>://WOS:000177282900053

    Publication series

    NameMaterials Research Society Symposium Proceedings

    Other

    OtherMaking Functional Materials with Nanotubes
    CityBoston, MA
    Period1/07/02 → …
    Internet address

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