Abstract
A new design for a field effect transistor able to push back the physical limits of Moore's Law is described. An ab initio computational approach is presented that can be further developed to characterize the ON/OFF states of such a device. Distributed response analysis (M. in het Panhuis, P.L.A. Popelier, R.W. Munn, J.G. Ágyán (2001), J. Chem. Phys. 114, 7951 - 7961) is employed to investigate conductive behavior. The method demonstrates that in analogy to conduction an electron can move across a possible conjugated molecular switching element (para-nitroaniline) in an electric field.
Original language | English |
---|---|
Title of host publication | Materials Research Society Symposium - Proceedings|Mater Res Soc Symp Proc |
Pages | 365-370 |
Number of pages | 5 |
Volume | 706 |
Publication status | Published - 2002 |
Event | Making Functional Materials with Nanotubes - Boston, MA Duration: 1 Jul 2002 → … http://<Go to ISI>://WOS:000177282900053 |
Publication series
Name | Materials Research Society Symposium Proceedings |
---|
Other
Other | Making Functional Materials with Nanotubes |
---|---|
City | Boston, MA |
Period | 1/07/02 → … |
Internet address |