Abstract
In this work, we discuss the design of two low noise amplifiers (LNA) based on 1μm gate-length pHEMT InP transistors using two topologies. Designed for radio-astronomy applications, the first is a cascode circuit with a maximum gain of 15dB and noise figure of 0.6dB, while the second is a 2-stage cascaded amplifier with 27 dB gain and 0.63dB noise figure. The two amplifiers exhibit an input 1-dB compression point of -22dBm and -26dBm respectively, and a third order input intercept point of -10dBm and -5dBm, respectively. © 2010 IOP Publishing Ltd and SISSA.
Original language | English |
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Article number | P04008 |
Journal | Journal of Instrumentation |
Volume | 5 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2010 |
Keywords
- Analogue electronic circuits
- HEMT amplifiers
- Modeling of microwave systems