Design of a wideband low noise amplifier for radio-astronomy applications

Z. Hamaizia, N. Sengouga, M. Missous, E. Yagoub

    Research output: Contribution to journalArticlepeer-review

    Abstract

    In this work, we discuss the design of two low noise amplifiers (LNA) based on 1μm gate-length pHEMT InP transistors using two topologies. Designed for radio-astronomy applications, the first is a cascode circuit with a maximum gain of 15dB and noise figure of 0.6dB, while the second is a 2-stage cascaded amplifier with 27 dB gain and 0.63dB noise figure. The two amplifiers exhibit an input 1-dB compression point of -22dBm and -26dBm respectively, and a third order input intercept point of -10dBm and -5dBm, respectively. © 2010 IOP Publishing Ltd and SISSA.
    Original languageEnglish
    Article numberP04008
    JournalJournal of Instrumentation
    Volume5
    Issue number4
    DOIs
    Publication statusPublished - 2010

    Keywords

    • Analogue electronic circuits
    • HEMT amplifiers
    • Modeling of microwave systems

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