Design of low leakage InGaAs/InAlAs pHEMTs for wide band (300MHz to 2GHz) LNAs

A. Bouloukou; B. Boudjelida; A. Sobih; S. Boulay; J. Sly; M. Missous

doi:10.1109/ASDAM.2008.4743363

Design of low leakage InGaAs/InAlAs pHEMTs for wide band (300MHz to 2GHz) LNAs

A. Bouloukou, B. Boudjelida, A. Sobih, S. Boulay, J. Sly, M. Missous

Research output: Chapter in Book/Conference proceeding › Conference contribution

Abstract

This paper presents the design, fabrication and characterisation of InGaAs-InAlAs pHEMTs suitable for low frequency LNA designs. Transistors with variations in the supply layer thickness or Indium concentration are designed to provide for a range of transfer characteristics. Very low levels of leakage, of order of 0.2 μA/mm, are demonstrated by these pHEMTs, which enables the implementation of large-geometry, low-noise devices. © 2008 IEEE.

Original language	English
Title of host publication	ASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems\|ASDAM - Conf. Proc. Int. Conf. Adv. Semicond. Dev. Microsystems
Pages	79-82
Number of pages	3
DOIs	https://doi.org/10.1109/ASDAM.2008.4743363
Publication status	Published - 2008
Event	7th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2008 - Smolenice Duration: 1 Jul 2008 → … http://<Go to ISI>://000263223200047

Conference

Conference	7th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2008
City	Smolenice
Period	1/07/08 → …
Internet address	http://<Go to ISI>://000263223200047

Access to Document

10.1109/ASDAM.2008.4743363

Cite this

Bouloukou, A., Boudjelida, B., Sobih, A., Boulay, S., Sly, J., & Missous, M. (2008). Design of low leakage InGaAs/InAlAs pHEMTs for wide band (300MHz to 2GHz) LNAs. In ASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems|ASDAM - Conf. Proc. Int. Conf. Adv. Semicond. Dev. Microsystems (pp. 79-82) https://doi.org/10.1109/ASDAM.2008.4743363

@inproceedings{4c927a7c810d43a7ba3c44906165c955,

title = "Design of low leakage InGaAs/InAlAs pHEMTs for wide band (300MHz to 2GHz) LNAs",

abstract = "This paper presents the design, fabrication and characterisation of InGaAs-InAlAs pHEMTs suitable for low frequency LNA designs. Transistors with variations in the supply layer thickness or Indium concentration are designed to provide for a range of transfer characteristics. Very low levels of leakage, of order of 0.2 μA/mm, are demonstrated by these pHEMTs, which enables the implementation of large-geometry, low-noise devices. {\textcopyright} 2008 IEEE.",

author = "A. Bouloukou and B. Boudjelida and A. Sobih and S. Boulay and J. Sly and M. Missous",

note = "Bouloukou, A. Boudjelida, B. Sobih, A. Boulay, S. Sly, J. Missous, M.; 7th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2008 ; Conference date: 01-07-2008",

year = "2008",

doi = "10.1109/ASDAM.2008.4743363",

language = "English",

isbn = "9781424423262",

pages = "79--82",

booktitle = "ASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems|ASDAM - Conf. Proc. Int. Conf. Adv. Semicond. Dev. Microsystems",

url = "http://<Go to ISI>://000263223200047",

}

Bouloukou, A, Boudjelida, B, Sobih, A, Boulay, S, Sly, J & Missous, M 2008, Design of low leakage InGaAs/InAlAs pHEMTs for wide band (300MHz to 2GHz) LNAs. in ASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems|ASDAM - Conf. Proc. Int. Conf. Adv. Semicond. Dev. Microsystems. pp. 79-82, 7th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2008, Smolenice, 1/07/08. https://doi.org/10.1109/ASDAM.2008.4743363

Design of low leakage InGaAs/InAlAs pHEMTs for wide band (300MHz to 2GHz) LNAs. / Bouloukou, A.; Boudjelida, B.; Sobih, A. et al.
ASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems|ASDAM - Conf. Proc. Int. Conf. Adv. Semicond. Dev. Microsystems. 2008. p. 79-82.

Research output: Chapter in Book/Conference proceeding › Conference contribution

TY - GEN

T1 - Design of low leakage InGaAs/InAlAs pHEMTs for wide band (300MHz to 2GHz) LNAs

AU - Bouloukou, A.

AU - Boudjelida, B.

AU - Sobih, A.

AU - Boulay, S.

AU - Sly, J.

AU - Missous, M.

N1 - Bouloukou, A. Boudjelida, B. Sobih, A. Boulay, S. Sly, J. Missous, M.

PY - 2008

Y1 - 2008

N2 - This paper presents the design, fabrication and characterisation of InGaAs-InAlAs pHEMTs suitable for low frequency LNA designs. Transistors with variations in the supply layer thickness or Indium concentration are designed to provide for a range of transfer characteristics. Very low levels of leakage, of order of 0.2 μA/mm, are demonstrated by these pHEMTs, which enables the implementation of large-geometry, low-noise devices. © 2008 IEEE.

AB - This paper presents the design, fabrication and characterisation of InGaAs-InAlAs pHEMTs suitable for low frequency LNA designs. Transistors with variations in the supply layer thickness or Indium concentration are designed to provide for a range of transfer characteristics. Very low levels of leakage, of order of 0.2 μA/mm, are demonstrated by these pHEMTs, which enables the implementation of large-geometry, low-noise devices. © 2008 IEEE.

U2 - 10.1109/ASDAM.2008.4743363

DO - 10.1109/ASDAM.2008.4743363

M3 - Conference contribution

SN - 9781424423262

SP - 79

EP - 82

BT - ASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems|ASDAM - Conf. Proc. Int. Conf. Adv. Semicond. Dev. Microsystems

T2 - 7th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2008

Y2 - 1 July 2008

ER -

Bouloukou A, Boudjelida B, Sobih A, Boulay S, Sly J, Missous M. Design of low leakage InGaAs/InAlAs pHEMTs for wide band (300MHz to 2GHz) LNAs. In ASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems|ASDAM - Conf. Proc. Int. Conf. Adv. Semicond. Dev. Microsystems. 2008. p. 79-82 doi: 10.1109/ASDAM.2008.4743363

Design of low leakage InGaAs/InAlAs pHEMTs for wide band (300MHz to 2GHz) LNAs

Abstract

Conference

Access to Document

Fingerprint

Cite this