Design of low leakage InGaAs/InAlAs pHEMTs for wide band (300MHz to 2GHz) LNAs

A. Bouloukou, B. Boudjelida, A. Sobih, S. Boulay, J. Sly, M. Missous

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    This paper presents the design, fabrication and characterisation of InGaAs-InAlAs pHEMTs suitable for low frequency LNA designs. Transistors with variations in the supply layer thickness or Indium concentration are designed to provide for a range of transfer characteristics. Very low levels of leakage, of order of 0.2 μA/mm, are demonstrated by these pHEMTs, which enables the implementation of large-geometry, low-noise devices. © 2008 IEEE.
    Original languageEnglish
    Title of host publicationASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems|ASDAM - Conf. Proc. Int. Conf. Adv. Semicond. Dev. Microsystems
    Pages79-82
    Number of pages3
    DOIs
    Publication statusPublished - 2008
    Event7th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2008 - Smolenice
    Duration: 1 Jul 2008 → …
    http://<Go to ISI>://000263223200047

    Conference

    Conference7th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2008
    CitySmolenice
    Period1/07/08 → …
    Internet address

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