Detailed analysis on the spectral response of InP/InGaAs HPTs for optoelectronic applications

Hassan A. Khan; Ali A. Rezazadeh; Sarmad Sohaib; Tauseef Tauqeer

doi:10.1109/JQE.2012.2187176

Detailed analysis on the spectral response of InP/InGaAs HPTs for optoelectronic applications

Hassan A. Khan, Ali A. Rezazadeh, Sarmad Sohaib, Tauseef Tauqeer

Research output: Contribution to journal › Article › peer-review

Abstract

We analyze an analytical spectral-response model for heterojunction phototransistors (HPTs) in order to understand the behavior of lattice-matched InP/In 0.47Ga 0.53As HPTs with changing device and material parameters. The preliminary modeling of the spectral response lead to a good agreement between theoretical and experimental results for incident wavelength radiations at 980, 1310, and 1550 nm. We then performed several simulations in order to determine the individual influences of several parameters, such as the base-layer thickness and the surface-recombination velocity on the responsivity of the device. A decreasing trend for the surface-recombination parameter with increasing wavelengths was observed, and it is attributed to the greater recombination rate for high-energy photons generated near the surface. © 2006 IEEE.

Original language	English
Article number	6146396
Pages (from-to)	576-580
Number of pages	4
Journal	IEEE Journal of Quantum Electronics
Volume	48
Issue number	5
DOIs	https://doi.org/10.1109/JQE.2012.2187176
Publication status	Published - 2012

Keywords

Heterojunction
phototransistors and device physics
responsivity

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10.1109/JQE.2012.2187176

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@article{dca8a1d6049a43c1aff4368556da7914,

title = "Detailed analysis on the spectral response of InP/InGaAs HPTs for optoelectronic applications",

abstract = "We analyze an analytical spectral-response model for heterojunction phototransistors (HPTs) in order to understand the behavior of lattice-matched InP/In 0.47Ga 0.53As HPTs with changing device and material parameters. The preliminary modeling of the spectral response lead to a good agreement between theoretical and experimental results for incident wavelength radiations at 980, 1310, and 1550 nm. We then performed several simulations in order to determine the individual influences of several parameters, such as the base-layer thickness and the surface-recombination velocity on the responsivity of the device. A decreasing trend for the surface-recombination parameter with increasing wavelengths was observed, and it is attributed to the greater recombination rate for high-energy photons generated near the surface. {\textcopyright} 2006 IEEE.",

keywords = "Heterojunction, phototransistors and device physics, responsivity",

author = "Khan, {Hassan A.} and Rezazadeh, {Ali A.} and Sarmad Sohaib and Tauseef Tauqeer",

year = "2012",

doi = "10.1109/JQE.2012.2187176",

language = "English",

volume = "48",

pages = "576--580",

journal = "IEEE Journal of Quantum Electronics",

publisher = "IEEE",

number = "5",

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TY - JOUR

T1 - Detailed analysis on the spectral response of InP/InGaAs HPTs for optoelectronic applications

AU - Khan, Hassan A.

AU - Rezazadeh, Ali A.

AU - Sohaib, Sarmad

AU - Tauqeer, Tauseef

PY - 2012

Y1 - 2012

N2 - We analyze an analytical spectral-response model for heterojunction phototransistors (HPTs) in order to understand the behavior of lattice-matched InP/In 0.47Ga 0.53As HPTs with changing device and material parameters. The preliminary modeling of the spectral response lead to a good agreement between theoretical and experimental results for incident wavelength radiations at 980, 1310, and 1550 nm. We then performed several simulations in order to determine the individual influences of several parameters, such as the base-layer thickness and the surface-recombination velocity on the responsivity of the device. A decreasing trend for the surface-recombination parameter with increasing wavelengths was observed, and it is attributed to the greater recombination rate for high-energy photons generated near the surface. © 2006 IEEE.

AB - We analyze an analytical spectral-response model for heterojunction phototransistors (HPTs) in order to understand the behavior of lattice-matched InP/In 0.47Ga 0.53As HPTs with changing device and material parameters. The preliminary modeling of the spectral response lead to a good agreement between theoretical and experimental results for incident wavelength radiations at 980, 1310, and 1550 nm. We then performed several simulations in order to determine the individual influences of several parameters, such as the base-layer thickness and the surface-recombination velocity on the responsivity of the device. A decreasing trend for the surface-recombination parameter with increasing wavelengths was observed, and it is attributed to the greater recombination rate for high-energy photons generated near the surface. © 2006 IEEE.

KW - Heterojunction

KW - phototransistors and device physics

KW - responsivity

U2 - 10.1109/JQE.2012.2187176

DO - 10.1109/JQE.2012.2187176

M3 - Article

VL - 48

SP - 576

EP - 580

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

IS - 5

M1 - 6146396

ER -

Detailed analysis on the spectral response of InP/InGaAs HPTs for optoelectronic applications

Abstract

Keywords

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