Determination of crystallite propagation in laser annealed amorphous silicon by normal incidence spectral reflectance

G. Williams*, D. Sands, R. M. Geatches, Karen Kirkby

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    Abstract

    Analysis of normal incidence spectral reflectivity of excimer laser annealed α-Si:H shows that the annealed material can be modeled as a stratified system comprising a large-grained polycrystalline layer, a fine grained polycrystalline layer, and residual amorphous silicon in agreement with transmission electron microscopy. Optically, the large-grained poly-Si behaves as single-crystal silicon and the fine-grained material is modeled, using effective medium theory, as a mixture of single-crystal silicon and amorphous silicon.

    Original languageEnglish
    Pages (from-to)1623-1625
    Number of pages3
    JournalApplied Physics Letters
    Volume69
    Issue number11
    Publication statusPublished - 9 Sept 1996

    Fingerprint

    Dive into the research topics of 'Determination of crystallite propagation in laser annealed amorphous silicon by normal incidence spectral reflectance'. Together they form a unique fingerprint.

    Cite this