Determination of relative internal quantum efficiency in InGaNGaN quantum wells

C. E. Martinez; N. M. Stanton; A. J. Kent; D. M. Graham; P. Dawson; M. J. Kappers; C. J. Humphreys

doi:10.1063/1.2033144

Determination of relative internal quantum efficiency in InGaNGaN quantum wells

C. E. Martinez, N. M. Stanton, A. J. Kent, D. M. Graham, P. Dawson, M. J. Kappers, C. J. Humphreys

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Abstract

We have investigated the relative quantum efficiency in a series of InGaNGaN single quantum wells with differing indium concentration. The results of measurements involving direct detection of phonons emitted as a result of nonradiative recombination and carrier energy relaxation are compared with time-resolved photoluminescence studies. Using these complementary techniques we have extracted the low-temperature internal quantum efficiency of the recombination and observed the effect of free-carrier screening on the radiative and nonradiative processes in the quantum well samples. All the samples exhibit high quantum efficiency, with the maximum being observed in the 10% indium sample. In addition, we observe the appearance of a delayed phonon signal, which we correlate to the measured quantum efficiency of the samples. © 2005 American Institute of Physics.

Original language	English
Article number	053509
Journal	Journal of Applied Physics
Volume	98
Issue number	5
DOIs	https://doi.org/10.1063/1.2033144
Publication status	Published - 1 Sept 2005

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@article{3014795ea29a4aaf935247ab2ca22a95,

title = "Determination of relative internal quantum efficiency in InGaNGaN quantum wells",

abstract = "We have investigated the relative quantum efficiency in a series of InGaNGaN single quantum wells with differing indium concentration. The results of measurements involving direct detection of phonons emitted as a result of nonradiative recombination and carrier energy relaxation are compared with time-resolved photoluminescence studies. Using these complementary techniques we have extracted the low-temperature internal quantum efficiency of the recombination and observed the effect of free-carrier screening on the radiative and nonradiative processes in the quantum well samples. All the samples exhibit high quantum efficiency, with the maximum being observed in the 10% indium sample. In addition, we observe the appearance of a delayed phonon signal, which we correlate to the measured quantum efficiency of the samples. {\textcopyright} 2005 American Institute of Physics.",

author = "Martinez, {C. E.} and Stanton, {N. M.} and Kent, {A. J.} and Graham, {D. M.} and P. Dawson and Kappers, {M. J.} and Humphreys, {C. J.}",

year = "2005",

month = sep,

day = "1",

doi = "10.1063/1.2033144",

language = "English",

volume = "98",

journal = "Journal of Applied Physics",

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publisher = "American Institute of Physics",

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TY - JOUR

T1 - Determination of relative internal quantum efficiency in InGaNGaN quantum wells

AU - Martinez, C. E.

AU - Stanton, N. M.

AU - Kent, A. J.

AU - Graham, D. M.

AU - Dawson, P.

AU - Kappers, M. J.

AU - Humphreys, C. J.

PY - 2005/9/1

Y1 - 2005/9/1

N2 - We have investigated the relative quantum efficiency in a series of InGaNGaN single quantum wells with differing indium concentration. The results of measurements involving direct detection of phonons emitted as a result of nonradiative recombination and carrier energy relaxation are compared with time-resolved photoluminescence studies. Using these complementary techniques we have extracted the low-temperature internal quantum efficiency of the recombination and observed the effect of free-carrier screening on the radiative and nonradiative processes in the quantum well samples. All the samples exhibit high quantum efficiency, with the maximum being observed in the 10% indium sample. In addition, we observe the appearance of a delayed phonon signal, which we correlate to the measured quantum efficiency of the samples. © 2005 American Institute of Physics.

AB - We have investigated the relative quantum efficiency in a series of InGaNGaN single quantum wells with differing indium concentration. The results of measurements involving direct detection of phonons emitted as a result of nonradiative recombination and carrier energy relaxation are compared with time-resolved photoluminescence studies. Using these complementary techniques we have extracted the low-temperature internal quantum efficiency of the recombination and observed the effect of free-carrier screening on the radiative and nonradiative processes in the quantum well samples. All the samples exhibit high quantum efficiency, with the maximum being observed in the 10% indium sample. In addition, we observe the appearance of a delayed phonon signal, which we correlate to the measured quantum efficiency of the samples. © 2005 American Institute of Physics.

U2 - 10.1063/1.2033144

DO - 10.1063/1.2033144

M3 - Article

SN - 1089-7550

VL - 98

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

M1 - 053509

ER -

Determination of relative internal quantum efficiency in InGaNGaN quantum wells

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