Development of advanced Gunn diodes and Schottky multipliers for high power THz sources

F. Amir; C. Mitchell; M. Missous

doi:10.1109/ASDAM.2010.5667005

Development of advanced Gunn diodes and Schottky multipliers for high power THz sources

F. Amir, C. Mitchell, M. Missous

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

Abstract

An advanced step-graded Gunn diode (∼ 100 GHz fundamental frequency) has been developed using a joint modelling-experimental approach to test GaAs based Gunn oscillators at sub-millimetre wavelengths. These devices are to be used as high power (multi-mW) Terahertz sources in conjunction with multipliers using Schottky diodes as the non-linear elements. The modelled-measured results of low series resistance Schottky diodes with non-alloyed contacts are also discussed. ©2010 IEEE.

Original language	English
Title of host publication	Conference Proceedings - The 8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010\|Conf. Proc. - Int. Conf. Adv. Semicond. Devices Microsystems, ASDAM
Pages	29-32
Number of pages	3
DOIs	https://doi.org/10.1109/ASDAM.2010.5667005
Publication status	Published - 2010
Event	18th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010 - Smolenice Duration: 1 Jul 2010 → …

Conference

Conference	18th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010
City	Smolenice
Period	1/07/10 → …

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10.1109/ASDAM.2010.5667005

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Amir, F., Mitchell, C., & Missous, M. (2010). Development of advanced Gunn diodes and Schottky multipliers for high power THz sources. In Conference Proceedings - The 8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010|Conf. Proc. - Int. Conf. Adv. Semicond. Devices Microsystems, ASDAM (pp. 29-32) https://doi.org/10.1109/ASDAM.2010.5667005

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title = "Development of advanced Gunn diodes and Schottky multipliers for high power THz sources",

abstract = "An advanced step-graded Gunn diode (∼ 100 GHz fundamental frequency) has been developed using a joint modelling-experimental approach to test GaAs based Gunn oscillators at sub-millimetre wavelengths. These devices are to be used as high power (multi-mW) Terahertz sources in conjunction with multipliers using Schottky diodes as the non-linear elements. The modelled-measured results of low series resistance Schottky diodes with non-alloyed contacts are also discussed. {\textcopyright}2010 IEEE.",

author = "F. Amir and C. Mitchell and M. Missous",

year = "2010",

doi = "10.1109/ASDAM.2010.5667005",

language = "English",

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pages = "29--32",

booktitle = "Conference Proceedings - The 8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010|Conf. Proc. - Int. Conf. Adv. Semicond. Devices Microsystems, ASDAM",

note = "18th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010 ; Conference date: 01-07-2010",

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Amir, F, Mitchell, C & Missous, M 2010, Development of advanced Gunn diodes and Schottky multipliers for high power THz sources. in Conference Proceedings - The 8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010|Conf. Proc. - Int. Conf. Adv. Semicond. Devices Microsystems, ASDAM. pp. 29-32, 18th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010, Smolenice, 1/07/10. https://doi.org/10.1109/ASDAM.2010.5667005

Development of advanced Gunn diodes and Schottky multipliers for high power THz sources. / Amir, F.; Mitchell, C.; Missous, M.
Conference Proceedings - The 8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010|Conf. Proc. - Int. Conf. Adv. Semicond. Devices Microsystems, ASDAM. 2010. p. 29-32.

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

TY - GEN

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AB - An advanced step-graded Gunn diode (∼ 100 GHz fundamental frequency) has been developed using a joint modelling-experimental approach to test GaAs based Gunn oscillators at sub-millimetre wavelengths. These devices are to be used as high power (multi-mW) Terahertz sources in conjunction with multipliers using Schottky diodes as the non-linear elements. The modelled-measured results of low series resistance Schottky diodes with non-alloyed contacts are also discussed. ©2010 IEEE.

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DO - 10.1109/ASDAM.2010.5667005

M3 - Conference contribution

SN - 9781424485758

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BT - Conference Proceedings - The 8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010|Conf. Proc. - Int. Conf. Adv. Semicond. Devices Microsystems, ASDAM

T2 - 18th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010

Y2 - 1 July 2010

ER -

Development of advanced Gunn diodes and Schottky multipliers for high power THz sources

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