Development of reactive-ion etching for ZnO-based nanodevices

Kin Kiong Lee, Yi Luo, Xiaofeng Lu, Peng Bao, Aimin M. Song

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    We report on the systematic studies of reactive-ion etching (RIE) conditions for zinc oxide (ZnO) films with methane and hydrogen gases. The etching conditions were optimized to ensure high selectivity of ZnO to poly(methyl methacrylate) (PMMA), which is commonly used as an etching mask in nanolithography. We also show the feasibility of fabricating nanofeatures patterned onto a thin layer (
    Original languageEnglish
    Article number5597950
    Pages (from-to)839-843
    Number of pages4
    JournalIEEE Transactions on Nanotechnology
    Issue number4
    Publication statusPublished - Jul 2011


    • Nanoimprint technique
    • reactive-ion etching (RIE)
    • semiconductor device fabrication
    • zinc oxide devices (ZnO)


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