Development of reactive-ion etching for ZnO-based nanodevices

Kin Kiong Lee; Yi Luo; Xiaofeng Lu; Peng Bao; Aimin M. Song

doi:10.1109/TNANO.2010.2085013

Development of reactive-ion etching for ZnO-based nanodevices

Kin Kiong Lee, Yi Luo, Xiaofeng Lu, Peng Bao, Aimin M. Song

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Abstract

We report on the systematic studies of reactive-ion etching (RIE) conditions for zinc oxide (ZnO) films with methane and hydrogen gases. The etching conditions were optimized to ensure high selectivity of ZnO to poly(methyl methacrylate) (PMMA), which is commonly used as an etching mask in nanolithography. We also show the feasibility of fabricating nanofeatures patterned onto a thin layer (

Original language	English
Article number	5597950
Pages (from-to)	839-843
Number of pages	4
Journal	IEEE Transactions on Nanotechnology
Volume	10
Issue number	4
DOIs	https://doi.org/10.1109/TNANO.2010.2085013
Publication status	Published - Jul 2011

Keywords

Nanoimprint technique
reactive-ion etching (RIE)
semiconductor device fabrication
zinc oxide devices (ZnO)

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10.1109/TNANO.2010.2085013

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title = "Development of reactive-ion etching for ZnO-based nanodevices",

abstract = "We report on the systematic studies of reactive-ion etching (RIE) conditions for zinc oxide (ZnO) films with methane and hydrogen gases. The etching conditions were optimized to ensure high selectivity of ZnO to poly(methyl methacrylate) (PMMA), which is commonly used as an etching mask in nanolithography. We also show the feasibility of fabricating nanofeatures patterned onto a thin layer (",

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KW - reactive-ion etching (RIE)

KW - semiconductor device fabrication

KW - zinc oxide devices (ZnO)

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Development of reactive-ion etching for ZnO-based nanodevices

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Keywords

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